多晶硅MEMS冲击失效的两尺度与三尺度有限元分析

S. Mariani, A. Ghisi, R. Martini, A. Corigliano, B. Simoni
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引用次数: 3

摘要

采用多尺度方法研究了多晶硅MEMS的冲击失效。为了了解这种方法的能力并评估其准确性,我们比较了通过两尺度和三尺度模拟预测的故障。在第一种情况下,我们在封装水平(宏观尺度)和传感器水平(介观尺度)上模拟设备对冲击的响应。在后一种情况下,我们还考虑到构成MEMS可移动部件的多晶硅薄膜的微观结构特征,以便跟踪失效模式。以商用单轴加速度计为研究对象,三尺度方法的结果表明,导致破坏的微裂纹局限在锚点附近相当狭窄的区域内。如果采用适当定义的各向异性多晶硅薄膜失效准则,则双尺度方法的结果与这一证据相匹配。此外,两种方法预测的失败时间非常一致。因此,虽然三尺度方法提供了许多关于故障模式的见解,但传感器的总体响应似乎是正确的(从工业角度来看),通过更简单和更经济的两尺度模拟来估计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two-scale vs three-scale FE analyses of shock-induced failure in polysilicon MEMS
Shock-induced failure of polysilicon MEMS is investigated by adopting a multi-scale approach. To understand the capability of this approach and to assess its accuracy, we compare the failure forecasted through two-scale and three-scale simulations. In the first case we model the response of the device to the shocks at the package level (macroscopic scale) and at the sensor level (mesoscopic scale). In the latter case we also allow for micro-structural features of the polysilicon film constituting the movable parts of the MEMS, so as to track the failure mode. Focusing on a commercial off-the-shelf uniaxial accelerometer subject to drops, results of the three-scale approach show that the micro-cracking leading to failure is confined inside a rather narrow region close to the anchor points. Outcomes of the two-scale approach correctly match this evidence, provided an appropriately defined failure criterion for the anisotropic polysilicon film is adopted. Moreover, the time to failure predicted by the two approaches well agree. Therefore, while the three-scale approach furnishes much insights on the failure mode, the overall response of the sensor appears to be correctly (from an industrial perspective) estimated by the far simpler and more economic two-scale simulations.
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