汽车MOSFET晶体管的电-热-机械仿真

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI:10.1109/ESIME.2010.5464597

H. Feral, X. Chauffleur, J. Fradin

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引用次数: 0

摘要

如今，可靠性预测是电子封装行业面临的新挑战。本文讨论了一种用于MOSFET晶体管可靠性研究的三维电-热-机械建模方法。这种建模方法提高了热力学计算的精度。利用电热联合仿真计算了耗散功率任务剖面。芯片温度和耗散功率之间的联系被建模为电力电子二极管和MOSFET。开发了特定的MOSFET和二极管温度依赖模型。围绕EPSILON-R3D热建模工具开发建模方法。使用MODELICA和OpenModelica进行电计算。采用ANSYS软件对温度场进行了热力学研究。

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Electro-thermo-mechanical simulation of automotive MOSFET transistor

Today, the reliability forecast is a new challenge for the electronic packaging industry. This paper deals with a 3 dimensional electro-thermo-mechanical modeling method for reliability studies of MOSFET transistor. This modeling method increases the accuracy of the thermomechanical computation. The dissipated power mission profile is computed with an electro-thermal co-simulation. The link between chip temperature and dissipated power is modeled for power electronics diodes and MOSFET. Specific MOSFET and diodes temperature dependent models are developed. Modeling method is developed around EPSILON-R3D thermal modeling tool. MODELICA and OpenModelica are used for electric computations. Temperature field is used for the thermo-mechanical study with ANSYS.

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2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)

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