2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)最新文献_第3页

Stacked DBC Cavitied Substrate for a 15-kV Half-bridge Power Module 用于15kv半桥电源模块的堆叠DBC空腔基板

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/IWIPP.2019.8799077

A. Deshpande, F. Luo, A. Iradukunda, D. Huitink, L. Boteler

{"title":"Stacked DBC Cavitied Substrate for a 15-kV Half-bridge Power Module","authors":"A. Deshpande, F. Luo, A. Iradukunda, D. Huitink, L. Boteler","doi":"10.1109/IWIPP.2019.8799077","DOIUrl":"https://doi.org/10.1109/IWIPP.2019.8799077","url":null,"abstract":"High-voltage (3.3 – 10 kV) SiC power switching devices are on the verge of commercialization, while devices rated 15 kV and above are expected in the future. Consequently, there is an increasing demand for power modules that reliably packages them in common topologies for high-performance, while using standard manufacturing processes. This paper presents a solution to utilize direct-bonded-copper (DBC), which is a conventional low-voltage power module substrate, for highvoltage (15 kV) half-bridge power module packaging. The concept involves stacking multiple DBCs with the top-surface metallization pattern replicated on each inter-layer and the bottom-surface metallization. The consequent formation of the interlayer cavities within the stacked substrate creates a series-connected multi-layer capacitor under the DC+, DC−, and AC top-surface metallization. The multi-layer capacitors, where the DBC ceramic acts as the dielectric, equally distribute the high-voltage on the top-surface metallization across each ceramic under it. The voltage distribution enables minimization of the electric fields at the critical triple-point and within the bulk of ceramic. The proposed stacking allows bypassing the need for a voltage-clamped interlayer metallization. A multi-domain (electrical, thermal, mechanical) parametric analysis was performed to determine the number of ceramic layers and total ceramic thickness in the stack. The performed analysis qualitatively demonstrated the effectiveness of the proposed solution with an underlying trade-off.","PeriodicalId":150849,"journal":{"name":"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124375466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters 短路条件下SiC mosfet的热模拟:各种模拟参数的影响

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/IWIPP.2019.8799085

Y. Pascal, M. Petit, D. Labrousse, F. Costa

引用次数: 4

Bus Snubber Optimization for Multi-Chip Power Modules using SPICE Simulations 基于SPICE仿真的多芯片电源模块总线缓冲器优化

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/IWIPP.2019.8799089

Brian T. DeBoi, A. Lemmon

引用次数: 0

Measurement of Space Charge Distribution Accumulated in Super Engineering Plastics at High Temperature Under High Dc Electric Field 高温高压直流电场下超级工程塑料中空间电荷积累分布的测量

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/IWIPP.2019.8799090

M. Mima, Yu-ichi Narita, Tokihiro Narita, H. Miyake, Y. Tanaka

引用次数: 0

Comparison of Silicon Carbide Packages with Different Solder Attach Materials under High Temperature, Fast Power Cycling Conditions 高温、快速功率循环条件下不同焊点材料碳化硅封装的比较

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/IWIPP.2019.8799100

Lauren E. Kegley, Tim Foster, S. Seal, R. Shaw, B. Mcpherson, B. Passmore, M. Schupbach, T. McNutt

引用次数: 0

[Copyright notice] (版权)

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/iwipp.2019.8799102

引用次数: 0

Robust On-line Junction Temperature Estimation of IGBT Power Modules based on Von during PWM Power Cycling 基于Von的PWM功率循环过程中IGBT功率模块结温鲁棒在线估计

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/IWIPP.2019.8799086

N. Degrenne, S. Mollov

{"title":"Robust On-line Junction Temperature Estimation of IGBT Power Modules based on Von during PWM Power Cycling","authors":"N. Degrenne, S. Mollov","doi":"10.1109/IWIPP.2019.8799086","DOIUrl":"https://doi.org/10.1109/IWIPP.2019.8799086","url":null,"abstract":"Estimation of the junction temperature Tj is key for protection, diagnostics and prognostics of power IGBT modules. Requirements are low-cost, low calibration effort, low intrusiveness, high accuracy, and high robustness. The objective of this paper is to present an on-line Tj estimation method using low load-current pulses for IGBTs and diodes based on the on-state voltage Von as a Temperature Sensitive Electrical Parameter (TSEP). It associates for the first time a calibration, a model, a pulse generation, a measurement and a robustness tuning to generate an estimation with highest performances.The implemented auto-calibration procedure relies on a reduced set of 3-dimensional data. The temperature estimation method is validated on a PWM switching converter, whereby the interruption of the nominal process is shorter than 100us. The estimations are compared to the measurements taken with infrared camera, with error smaller than ±3°C. In addition, a simple analytical on-line method is proposed to correct the errors caused by successive wire-bond lift-off, attributable to the natural ageing of the module, and maintain it within less than ±2°C.The on-line, accurate, robust and practical implementation of Von as a TSEP, as demonstrated in this paper, is intended for condition monitoring of power semiconductor modules in power cycling and field applications.","PeriodicalId":150849,"journal":{"name":"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"19 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114098023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Evaluation of Electric Charge Accumulation in Insulation Layer of Power Module using Direct Current Integrated Charge Measurement 直流综合电荷测量法评价电源模块绝缘层电荷积累

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/IWIPP.2019.8799087

D. Hanazawa, M. Mima, K. Hijikata, H. Miyake, Y. Tanaka, T. Takada

{"title":"Evaluation of Electric Charge Accumulation in Insulation Layer of Power Module using Direct Current Integrated Charge Measurement","authors":"D. Hanazawa, M. Mima, K. Hijikata, H. Miyake, Y. Tanaka, T. Takada","doi":"10.1109/IWIPP.2019.8799087","DOIUrl":"https://doi.org/10.1109/IWIPP.2019.8799087","url":null,"abstract":"In this paper, we tried to evaluate the charge accumulation in insulating materials used for electronic power devices. Space charge accumulation is said that one of important factors to evaluate the insulating materials under dc high electric fields, especially at high temperature. While, the space charge accumulation in insulating materials has been measured using pulse electro acoustic (PEA) method, the PEA method has been mainly applied to sheet shape samples. Therefore, it is difficult to apply the PEA method to an insulating layers used for an actual electronic devices, which are usually composed of complicated shape. Therefore, we have tried to apply a direct current integrated charge measurement which is newly developed measurement method to evaluate the charge accumulation in the insulating layers. Using the method, we tried to estimate the charge accumulation in the insulating layer of actual power electronic devices under various electric stresses at various temperature. As the result, it was found that the method was preferably available to evaluate the characteristics of charge accumulation in the insulation layers of the power electronic devices.","PeriodicalId":150849,"journal":{"name":"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131706466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Drastic Change in Non-Linear Resistive Materials I(V) Characteristics 非线性电阻材料I(V)特性的急剧变化

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/IWIPP.2019.8799097

G. Bélijar, L. Hermette, M. Kozako, M. Hikita

引用次数: 0

The development of 1200 V SiC Hybrid Switched power modules 1200v SiC混合开关电源模块的研制

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) Pub Date : 2019-04-01 DOI: 10.1109/IWIPP.2019.8799083

P. Ning, Tianshu Yuan, Han Cao, Lei Li, Yuhui Kang

引用次数: 3