P. Ning, Tianshu Yuan, Han Cao, Lei Li, Yuhui Kang
{"title":"1200v SiC混合开关电源模块的研制","authors":"P. Ning, Tianshu Yuan, Han Cao, Lei Li, Yuhui Kang","doi":"10.1109/IWIPP.2019.8799083","DOIUrl":null,"url":null,"abstract":"In this paper, three hybrid switch (HyS) module consisting of the paralleled Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) are developed. From the double pulse evaluation results, they are promising for fast switching and low price. The fabricated 1200 V/200 A hybrid module was used for a motor drive, and it was tested to 30 kW, 30 kHz.","PeriodicalId":150849,"journal":{"name":"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"156 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"The development of 1200 V SiC Hybrid Switched power modules\",\"authors\":\"P. Ning, Tianshu Yuan, Han Cao, Lei Li, Yuhui Kang\",\"doi\":\"10.1109/IWIPP.2019.8799083\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, three hybrid switch (HyS) module consisting of the paralleled Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) are developed. From the double pulse evaluation results, they are promising for fast switching and low price. The fabricated 1200 V/200 A hybrid module was used for a motor drive, and it was tested to 30 kW, 30 kHz.\",\"PeriodicalId\":150849,\"journal\":{\"name\":\"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)\",\"volume\":\"156 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWIPP.2019.8799083\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWIPP.2019.8799083","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The development of 1200 V SiC Hybrid Switched power modules
In this paper, three hybrid switch (HyS) module consisting of the paralleled Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) are developed. From the double pulse evaluation results, they are promising for fast switching and low price. The fabricated 1200 V/200 A hybrid module was used for a motor drive, and it was tested to 30 kW, 30 kHz.