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2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)最新文献

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Non-contact sensing system based on GaN optoelectronic chip 基于GaN光电芯片的非接触式传感系统
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070952
Mingming Bai, Linning Wang, Chengchen Zhang, Yongjin Wang
{"title":"Non-contact sensing system based on GaN optoelectronic chip","authors":"Mingming Bai, Linning Wang, Chengchen Zhang, Yongjin Wang","doi":"10.1109/SSLChinaIFWS57942.2023.10070952","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070952","url":null,"abstract":"As the global spread of COVID-19 becomes a rapidly evolving crisis, the development of contactless shared interactive displays is an urgent issue to reduce the risk of viral and bacterial cross contamination due to the use of touch-operated shared user terminals. Here, we experimentally demonstrate a contactless user terminal fabricated with a monolithic GaN Optoelectronic system (MGOS), which integrates the transmitter and receiver into a single chip. The inherent spectral emission-responsiveness overlap of GaN QW diodes gives the device a unique ability to detect light transmitted by diodes that share the same QW structure. When the GaN transmitter emits light to illuminate an external object, the integrated GaN receiver can detect the reflected light encoding the information and convert the optical signal into an electrical signal, so that the non-contact user terminal has the ability to use light for bidirectional data communication. Compared to traditional handwriting systems, these terminals operate as contactless information entry devices that can help reduce potential cross-contamination due to contact with handwriting terminals, provide precautions to keep the environment clean, and help prevent virus transmission.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123148003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Visual comfort of coloured background display stimuli under the dark environment 黑暗环境下彩色背景显示刺激的视觉舒适性
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071138
Yu Liu, Yuechen Zhu, M. Luo
{"title":"Visual comfort of coloured background display stimuli under the dark environment","authors":"Yu Liu, Yuechen Zhu, M. Luo","doi":"10.1109/SSLChinaIFWS57942.2023.10071138","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071138","url":null,"abstract":"The purpose of this study was to investigate visual comfort of coloured background stimuli on a mobile display in the dark environment. Seventy-eight rendered images were created with backgrounds covering 6 CCT and 13 Duv coordinates. Twenty observers evaluated visual comfort using a 6-category points method. The results showed that visual comfort decreases with Duv reaching -0.0011. The highest background visual comfort levels were 5000K and 6500K, followed by 4000K, 8000K, 10000K and 3000K. A model was developed to evaluate the visual comfort of colour stimulus.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"11 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113939570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on the technique of accurately measuring thermal resistance of SiC MOSFET SiC MOSFET热阻精确测量技术研究
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070926
A. Liu, Guobin Zhang, Tao Liu, Shaohong Li, Teng Zhang, Run-Hua Huang, Song Bai, Shen Xu, Weifeng Sun
{"title":"Research on the technique of accurately measuring thermal resistance of SiC MOSFET","authors":"A. Liu, Guobin Zhang, Tao Liu, Shaohong Li, Teng Zhang, Run-Hua Huang, Song Bai, Shen Xu, Weifeng Sun","doi":"10.1109/SSLChinaIFWS57942.2023.10070926","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070926","url":null,"abstract":"The thermal resistance testing mechanism of SiC MOSFET is studied in this paper. The thermal resistance is an important performance parameter of SiC MOSFET. The shortcomings of traditional test methods are studied. Due to the difference of device structure and process level, the interface state in and near the gate oxygen of SiC MOSFET will affect the opening state of SiC MOSFET channels. The traditional thermal resistance test method is affected by this mechanism, which is not conducive to accurate evaluation of the thermal resistance of SiC MOSFET. In this paper, the method of SiC MOSFET temperature sensitive parameters is further studied. At the same time, comparative tests of thermal resistance tests are carried out for different current heating methods and combinations of temperature sensitive parameters. Based on the test results and mechanism analysis, the optimal thermal resistance evaluation method is given.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123962304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The surface and interface evolution of graphene under air exposure 空气暴露下石墨烯的表面和界面演化
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070961
Peng Wang, Li Sun, Xue Zhang, Xing Guo, F. Yu, Xian Zhao
{"title":"The surface and interface evolution of graphene under air exposure","authors":"Peng Wang, Li Sun, Xue Zhang, Xing Guo, F. Yu, Xian Zhao","doi":"10.1109/SSLChinaIFWS57942.2023.10070961","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070961","url":null,"abstract":"Graphene, as a channel material in radio-frequency (RF) electronic devices, has shown great application prospect because of its excellent electrical properties. At present, remarkable progress has been made in graphene RF transistors. However, there are still many factors that affect the yield of device, and the state of graphene is an important factor in device failure. In this paper, the changes occurred in single-crystal graphene grown by chemical vapor deposition (CVD) exposed to air were studied as time prolonging. After oxidization in air, surface morphology showed significant change. Redshift of G and 2D peaks of graphene grown on Cu foil were found in Raman spectra, which means that the graphene is in a state of tensile strain. Substrates oxidized at ambient conditions produced more irregular steps and higher roughness. The interface state of graphene and underneath Cu substrate was studied and the relationship between graphene oxidation and substrate crystallographic plane was clarified by electron backscattered diffraction (EBSD). It is instructive to perform a specific Cu surface to grow high quality graphene for RF electronic devices with less device failure.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121477566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transfer printing quantum dots for full-color micro-LED display 用于全彩微型led显示屏的转移打印量子点
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/sslchinaifws57942.2023.10070974
Yanzhe Li, Xinyi Shan, Zhou Wang, Shijie Zhu, Xugao Cui, Gaoshan Huang, Y. Mei, P. Tian
{"title":"Transfer printing quantum dots for full-color micro-LED display","authors":"Yanzhe Li, Xinyi Shan, Zhou Wang, Shijie Zhu, Xugao Cui, Gaoshan Huang, Y. Mei, P. Tian","doi":"10.1109/sslchinaifws57942.2023.10070974","DOIUrl":"https://doi.org/10.1109/sslchinaifws57942.2023.10070974","url":null,"abstract":"A distributed Bragg reflector (DBR) was designed and fabricated to reflect the excess blue light to both increase the utilization of the blue light from micro-LED and improve the color purity of the red and green light from QDs. Red and green QDs arrays on glass substrate were presented by transfer printing via polydimethylsiloxane (PDMS) stamp. The red QDs transferred on the DBR as color-converting layer was then attached with the blue micro-LED, and the red QDs down-converted the blue emission from the micro-LED to the red emission. These results provided the promising potential of transfer printing QDs as color-converting layer to realize full-color micro-LED display.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121897400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First principles studies for electronic structure of β-Ga2O3 and GaAs β-Ga2O3和GaAs电子结构的第一性原理研究
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070929
Ruoyun Yang, J. Zhang, Hongping Ma, Qingqing Zhang
{"title":"First principles studies for electronic structure of β-Ga2O3 and GaAs","authors":"Ruoyun Yang, J. Zhang, Hongping Ma, Qingqing Zhang","doi":"10.1109/SSLChinaIFWS57942.2023.10070929","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070929","url":null,"abstract":"Heterojunctions based on the compounding of wide and narrow bandgap materials provide a material basis for the realization of high-performance electronic and optoelectronic devices, but before constructing it, it’s necessary to study the electronic structure of the selected materials for theoretical analysis. In this paper, we found out β-Ga2O3 and GaAs are ideal candidates for wide-narrow bandgap recombination. The band structures and density of states of β-Ga2O3 and GaAs were calculated by first principles based on DFT theory for the analysis of electronic structures, and the results are in good agreement with the experimental work. Simulation calculation saves time and cost and can be used as a powerful tool for material analysis and prediction of material properties. These findings will facilitate the analysis and design of electronic and optoelectronic devices based on the combination of β-Ga2O3 and GaAs.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115594578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance enhancement of AlGaN deep-ultraviolet laser diodes with linear variation quantum barriers 线性变量子势垒增强AlGaN深紫外激光二极管的性能
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071071
Pengfei Zhang, Guangjun Zhong, Fang Wang, J. Liou, Yuhuai Liu
{"title":"Performance enhancement of AlGaN deep-ultraviolet laser diodes with linear variation quantum barriers","authors":"Pengfei Zhang, Guangjun Zhong, Fang Wang, J. Liou, Yuhuai Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071071","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071071","url":null,"abstract":"This paper proposes quantum barriers (QBs) with linearly decreasing/increasing Al molar fraction to improve the performance of AlGaN-based deep ultraviolet laser diodes (DUV-LDs). The effects of the QBs with constant Al molar fraction and the QBs with linearly changing Al molar fraction on the LDs performance are numerically investigated. The QBs with linearly changing Al molar fraction reduce the threshold voltage of the LDs, and increase the carrier injection efficiency, the carrier concentration in the quantum well region, the stimulated recombination rate, and the output power of the device, which is significant for the application and development of AlGaN materials in DUV-LDs.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129724247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of thickness in hole blocking layer of AlGaN-based deep ultraviolet laser diodes 氮化镓基深紫外激光二极管孔阻挡层厚度优化
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071110
Mengshuang Yin, Aoxiang Zhang, Yuan Xu, Fang Wang, J. Liou, Yuhuai Liu
{"title":"Optimization of thickness in hole blocking layer of AlGaN-based deep ultraviolet laser diodes","authors":"Mengshuang Yin, Aoxiang Zhang, Yuan Xu, Fang Wang, J. Liou, Yuhuai Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071110","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071110","url":null,"abstract":"In this paper, the thickness of the hole blocking layer(HBL) is optimized to reduce the hole leakage in the n-type region and improve the operating performance of the DUV-LD. The simulation of 12nm, 13nm, 14nm and 15nm thick HBLs was carried out by Crosslight software. By analyzing the energy band diagrams, P-I characteristics and V-I characteristics of the four structures, it is concluded that the 14 nm thick HBL can effectively reduce the hole leakage and has better optoelectronic performance.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130338424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis on abnormal forward conduction properties in GaN based JBS diode by TCAD simulation GaN基JBS二极管异常正导特性的TCAD仿真分析
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070928
Qi Zhang, Qianshu Wu, Yapeng Wang, Qiuling Qiu, Zhenxing Liu, Jinwei Zhang, Cheng Li, Yuhao Zhou, Yang Liu
{"title":"Analysis on abnormal forward conduction properties in GaN based JBS diode by TCAD simulation","authors":"Qi Zhang, Qianshu Wu, Yapeng Wang, Qiuling Qiu, Zhenxing Liu, Jinwei Zhang, Cheng Li, Yuhao Zhou, Yang Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10070928","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070928","url":null,"abstract":"Abnormal phenomenon that on-resistance of JBS diode increases with forward bias has been studied in this work. It is found that the forward bias is mainly applied to the p-type Schottky junction, resulting in a slower electric potential increasing rate of p-GaN than n-type channel between adjacent p-grid. Therefore, the lateral PN junction at channel is reversely biased and the effective conduction area of JBS diode reduces, which results in the increase of on-resistance. JBS diodes with different Schottky barrier height at p-type Schottky contact are also simulated to verify our analysis. The decrease of barrier height at p-type Schottky junction results in that the anode voltage is mainly applied to the PN junction, which can shorten the lateral depletion region and decrease the on-resistance of JBS diode. The simulation results in this paper are useful for providing reference advice for following experiments.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131904324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High Gain P-L-S Band Power Amplifier Based On IPD technology 一种基于IPD技术的高增益P-L-S波段功率放大器
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071012
Ruoqi Yu, Yi Wang, Yansheng Hu, Jun Yin, J. Mo, Chuanbo Wang, Qiangdong Wang, Guoqing Yan, Tao Ni
{"title":"A High Gain P-L-S Band Power Amplifier Based On IPD technology","authors":"Ruoqi Yu, Yi Wang, Yansheng Hu, Jun Yin, J. Mo, Chuanbo Wang, Qiangdong Wang, Guoqing Yan, Tao Ni","doi":"10.1109/SSLChinaIFWS57942.2023.10071012","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071012","url":null,"abstract":"This article describes the design procedure of a high gain Gallium Nitride broadband power amplifier which covers from P-band to S-band. Thanks to the unique integrated passive device technology（IPD）, the amplifier is realized in small size and contains not only the driver stage but also two power stage which forms a balanced structure. The whole amplifier is soldered in a package with the size of 27.3mm×30.6mm×5.0mm。The measured PA produces 25.2-36.4W of output power with the PAE of 40.7-53.5%.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131998271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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