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2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)最新文献

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Improvement of Optoelectronic Characteristics of Deep-ultraviolet Laser Diode with an Optimal Thickness of Electron Blocking Layer and Waveguide Layer 电子阻挡层和波导层最佳厚度对深紫外激光二极管光电特性的改善
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071002
Chi Zhang, Yuan-Ping Xu, Fang Wang, J. Liou, Yuhuai Liu
{"title":"Improvement of Optoelectronic Characteristics of Deep-ultraviolet Laser Diode with an Optimal Thickness of Electron Blocking Layer and Waveguide Layer","authors":"Chi Zhang, Yuan-Ping Xu, Fang Wang, J. Liou, Yuhuai Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071002","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071002","url":null,"abstract":"Low electron leakage and high optical confinement are challenges in the AlGaN-based deep-ultraviolet (DUV) laser diode (LD). In this paper, optimal thickness of electron blocking layer (EBL) and waveguide layer (WG) is used to increase performance of the laser diode, such as the optical confinement factor (OCF) and emission power of the DUV LD, and reduce the electron leakage. By comparing the performance of laser diodes with different thicknesses of electron blocking layer and waveguide layer. It is found that the DUV LD has best performance of electron blocking ability, when the waveguide layer is set to 90nm and electron blocking layer is set to 50nm. Moreover, the laser diode has a peak emission power of 109.69mW, a slope efficiency of 2.04W/A.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116384838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Large Dynamic Range Real-time White Balance Control in Laser Display 激光显示器大动态范围实时白平衡控制
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071068
Zhu Jianying, Bi Yong, Sun Minyuan, Gao Weinan, Yuan Yuan, Zhang Shuo
{"title":"Large Dynamic Range Real-time White Balance Control in Laser Display","authors":"Zhu Jianying, Bi Yong, Sun Minyuan, Gao Weinan, Yuan Yuan, Zhang Shuo","doi":"10.1109/SSLChinaIFWS57942.2023.10071068","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071068","url":null,"abstract":"The colorimetric principle of white balance control in laser display is explored. According to the CIE1931 standard chromaticity system and Glassman's color mixing law, the brightness ratio of the three primary color laser light sources R(637nm), G(525nm), and B(450nm) matching the white point of the color temperature range from 6500k to 9300k is calculated. A set of three-primary color white balance control system was designed, which is integrated into the 100-inch laser TV developed by the research group. The characteristics of automatic white balance under the change of light intensity with a large dynamic range and changes in ambient temperature were studied. The experimental results show that when the output light intensity is attenuated by 40%, the color temperature can be accurately controlled in 6500K±50K; when the ambient temperature changes from 18°C to 28°C, the color temperature error can be controlled within 120K.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122213035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on Uniformity of Epitaxial Graphene on 6-inch 4H-SiC Substrate 6英寸4H-SiC衬底外延石墨烯均匀性研究
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071008
Chen Shao, Xiaomeng Li, Guanglei Zhong, Xiufang Chen, Xiangang Xu, X. Hu, W. Yu, Xianglong Yang, Xuejian Xie, Huiqing Chen
{"title":"Study on Uniformity of Epitaxial Graphene on 6-inch 4H-SiC Substrate","authors":"Chen Shao, Xiaomeng Li, Guanglei Zhong, Xiufang Chen, Xiangang Xu, X. Hu, W. Yu, Xianglong Yang, Xuejian Xie, Huiqing Chen","doi":"10.1109/SSLChinaIFWS57942.2023.10071008","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071008","url":null,"abstract":"The preparation of graphene by silicon carbide (SiC) decomposition is compatible with the current mainstream device preparation technology and has a great application prospect. In this paper, VR-PVT software is used for theoretical simulation. The flat temperature field conducive to the uniform growth of large-size graphene is obtained by adjusting the heat preservation and insulation device, heat source setting, heating power and crucible design in the growth system. High quality 6-inch homogeneous bilayer graphene is grown on 6-inch 4H-SiC (0001) surfaces with optimized temperature field and suitable etching and growth process.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116880814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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