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2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)最新文献

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Design and optical characteristics simulation of LED plant lighting source LED植物照明光源的设计与光学特性仿真
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071112
Dong Li, Wei-ling Guo, Aoqi Fang
{"title":"Design and optical characteristics simulation of LED plant lighting source","authors":"Dong Li, Wei-ling Guo, Aoqi Fang","doi":"10.1109/SSLChinaIFWS57942.2023.10071112","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071112","url":null,"abstract":"LED plant lighting source has the advantages of high photoelectric conversion efficiency and adjustable spectrum, so it has a broader application prospect than traditional light source with high cost and low energy saving. However, because the light source includes multi-band spectra such as blue light, red light and ultraviolet, the combination of light source array will lead to the problem of uneven illuminance in the illumination area. Therefore, it is necessary to improve the uniformity of the illumination area by spectral optimization design. In this paper, optical simulation software was used to model and simulate the LED light source array, and the illuminance distribution of a single LED was analyzed. On the basis of the illuminance calculation formula, red, blue, infrared and ultraviolet LED were selected to establish a 7×7 square, triangle and ring array, and the simulation and ray tracing were carried out. The simulation results showed that: The illuminance uniformity U of square, triangle and ring arrays are 61.9%, 58.5% and 55.8%, respectively. Then the spacing of the square array was optimized, and the illuminance uniformity was increased from 61.9% to 80%.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125323044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of SiC Superjunction MOSFET: A Review SiC超结MOSFET的发展综述
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071020
Y. Duan, Yuan-Lan Zhang, J. Zhang, Pan Liu
{"title":"Development of SiC Superjunction MOSFET: A Review","authors":"Y. Duan, Yuan-Lan Zhang, J. Zhang, Pan Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071020","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071020","url":null,"abstract":"Silicon Carbide (SiC) is a booming semiconductor material with a wider bandgap than silicon, which brings superior electrical performance for applications such as high critical electric field, good high-temperature characteristics, etc. Among SiC devices, MOSFET received increasing attention, due to its excellent advantages such as low switching loss, high operating frequency, etc. In recent years, SiC MOSFETs were under fast development, while facing numerous challenges. For high voltage SiC MOSFET, the size of the device and drift region resistance are the main bottlenecks.The superjunction (SJ) structure is well-known as a \"milestone\" in the history of power devices, especially for MOSFET. Superjunction achieved a better trade-off between the breakdown voltage and the specific on-resistance by introducing a transverse electric field to the drift layer. A 3.3kV-class SiC SJ MOSFET was so far reported as a ultra-low specific on-resistance for 3.3 mΩcm2 at room temperature and 6.2 mΩcm2 at 175℃.[21] However, the development of SiC SJ MOSFETs is facing challenges, in terms of the fabrication of the p-pillar, the charge balance condition, etc. In this paper, recent progress on SiC SJ MOSFET was reviewed and listed through countries and regions. Achievements in both theoretical simulation and device fabrication were analyzed and compared. Moreover, constraints and prospects for the development of SiC SJ MOSFET were also discussed. Through this review, it is expected to help researchers to summarize recent advances on the SiC SJ MOSFET and to analyze the future trends, and to provide strategic planning for practitioners.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116756813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on High-Linearity Devices Based on Double-Channel AlGaN/GaN FinFET Structure 基于双通道AlGaN/GaN FinFET结构的高线性器件研究
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071092
Ang Li, Chong Wang, Xuefeng Zheng, Xiao-hua Ma, Yunlong He, Kai Liu, Yaopeng Zhao, Yue Hao
{"title":"Study on High-Linearity Devices Based on Double-Channel AlGaN/GaN FinFET Structure","authors":"Ang Li, Chong Wang, Xuefeng Zheng, Xiao-hua Ma, Yunlong He, Kai Liu, Yaopeng Zhao, Yue Hao","doi":"10.1109/SSLChinaIFWS57942.2023.10071092","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071092","url":null,"abstract":"The DC and RF characteristics of double-channel AlGaN/GaN FinFETs are analyzed. The linear operating characteristics of the double-channel AlGaN/GaN FinFET are investigated in detail. The simulated results show that the double-channel AlGaN/GaN heterostructure with doped barriers can improve the drain current, and the FinFET structure can enhance the control of the gate to the channel. The combination of FinFET structure and double-channel AlGaN/GaN heterostructure improves the gate voltage swing under DC conditions. The double-channel FinFET can effectively improve the gate bias-dependent current-gain cutoff frequency(fT) and unit-power-gain frequency(fmax) behaviors, which correlates with the broader transconductance characteristic of the double-channel FinFET.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128761368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation Investigation of Trenched Silicon Carbide Super-junction Schottky Diodes 沟槽型碳化硅超结肖特基二极管的仿真研究
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071049
Manqi Su, Yu-hua Sun, Qi Cui, Botong Li, Leifeng Jiang, Jilong Tang, C. Zeng, Z. Zeng, B. Zhang
{"title":"Simulation Investigation of Trenched Silicon Carbide Super-junction Schottky Diodes","authors":"Manqi Su, Yu-hua Sun, Qi Cui, Botong Li, Leifeng Jiang, Jilong Tang, C. Zeng, Z. Zeng, B. Zhang","doi":"10.1109/SSLChinaIFWS57942.2023.10071049","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071049","url":null,"abstract":"In this article, a two-dimensional finite element simulation tool Silvaco TCAD was used to simulate the structure of trenched silicon carbide (SiC) super-junction Schottky diodes. The effects of key structural parameters, including mesa width, trench sidewall angle and trench depth on the electrical performance of the device were studied. On this basis, the forward conduction and reverse blocking performance of the device structures with different parameter combinations were simulated. The simulation results show that larger mesa width and smaller trench sidewall angle are more beneficial to obtain lower specific on-resistance. Larger trench sidewall angle and larger trench depth are more beneficial to obtain high blocking voltage.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130419329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and application of dermoscope based on polarization imaging and uniform illumination 基于偏振成像和均匀照明的皮肤镜的设计与应用
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071107
Jian-gen Xu, Jinjiang Cui
{"title":"Design and application of dermoscope based on polarization imaging and uniform illumination","authors":"Jian-gen Xu, Jinjiang Cui","doi":"10.1109/SSLChinaIFWS57942.2023.10071107","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071107","url":null,"abstract":"Dermoscopy has been widely used in the clinical diagnosis of various skin lesions. However, how to observe the pigment structure in the epidermis, junction and dermal papillary layer more clearly and accurately still needs to be improved. The epidermal layer of the skin is similar to the mirror reflection, for which a portable dermatoscope with a field of view of 22 mm, a magnification of 10X, and a uniformity of about 85% is designed based on polarized imaging and uniform illumination, which can observe lesions and tissue morphology of deep skin tissues more precisely, thus improving diagnostic efficiency and accuracy.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126702541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deep-ultraviolet Laser Diode Characterization Improvement by Inverted Trapezoidal Hole Blocking Layer 利用倒梯形孔阻挡层改善深紫外激光二极管的特性
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071119
Yuan Xu, Mengshuang Yin, Pengfei Zhang, Aoxiang Zhang, Fang Wang, J. Liou, Yuhuai Liu
{"title":"Deep-ultraviolet Laser Diode Characterization Improvement by Inverted Trapezoidal Hole Blocking Layer","authors":"Yuan Xu, Mengshuang Yin, Pengfei Zhang, Aoxiang Zhang, Fang Wang, J. Liou, Yuhuai Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071119","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071119","url":null,"abstract":"Improving optical confinement and threshold currents has been the main focus of AlGaN-based deep-ultraviolet (DUV) laser diode (LD) optimization. In this paper, an inverted trapezoidal hole blocking layer (HBL) is used to increase the optical confinement factor, laser power, stimulated recombination rate and carrier confinement of the DUV LD. Attributed to reduced hole leakage and better optical confinement methods, the optimized device achieves 14.3% OCF at the peak emission wavelength of 267 nm and boasts a lower threshold current and higher slope efficiency (SE).","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126812536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Investigation of 1200V SiC MOSFET Radiation Ruggedness with Different Channel Lengths 不同通道长度下1200V SiC MOSFET辐射强度的研究
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071136
Hongyi Xu, Na Ren, Zhengjia Chen, Zeyu Re, Xin Wan, Ji Cheng, Kuang Sheng
{"title":"The Investigation of 1200V SiC MOSFET Radiation Ruggedness with Different Channel Lengths","authors":"Hongyi Xu, Na Ren, Zhengjia Chen, Zeyu Re, Xin Wan, Ji Cheng, Kuang Sheng","doi":"10.1109/SSLChinaIFWS57942.2023.10071136","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071136","url":null,"abstract":"In this paper the SiC MOSFET with different channel length was fabricated and were irradiated with Cobalt-60 γ-ray under different bias stress. Synergetic effects of structure and gate bias-stress design is experimentally studied. The turn-on voltage in 3rd quadrant could determine the channel leakage and indicates the state of the device. Long channel length could inhibit the conduction under large dose of radiation. The device failure mechanism under high radiation dose is also analyzed.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124357146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermodynamic simulation of 6×6 Micro-LED array in flip-chip bonding 6×6微型led阵列倒装键合的热力学模拟
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070985
Haojie Zhou, Xiaoxiao Ji, Luqiao Yin, Jianhua Zhang
{"title":"Thermodynamic simulation of 6×6 Micro-LED array in flip-chip bonding","authors":"Haojie Zhou, Xiaoxiao Ji, Luqiao Yin, Jianhua Zhang","doi":"10.1109/SSLChinaIFWS57942.2023.10070985","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070985","url":null,"abstract":"In this paper, we first simulated the influence of different diameters, heights and shapes on the In bumps by ANSYS simulation software. The results show that the changes of these conditions affect the deformation and stress of the In bumps to varying degrees. The height of the bumps has the least effect on the stress, while the diameter and shape of the bumps have a great effect on the deformation as well as stress. Finally, a sapphire based Mirco-LED array with a pixel pitch size of 7.5 μm was used to bond with silicon substrates with In bumps of different heights, and turn it on with electricity. We found that the In bumps height does affect the yield of Micro-LED, and the best yield in the experiment is > 90%. This study provides a theoretical basis for reducing the deformation and stress of In bumps during flip-chip bonding, and an experimental basis for improving bond yield and device performance.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"59 27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124380277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Near ultraviolet light modulator based on InGaN/AlGaN MQW diode 基于InGaN/AlGaN MQW二极管的近紫外光调制器
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071126
Jiabin Yan, Li Fang, Zhihang Sun, Hao Zhang, Pengzhan Liu, Yongjin Wang
{"title":"Near ultraviolet light modulator based on InGaN/AlGaN MQW diode","authors":"Jiabin Yan, Li Fang, Zhihang Sun, Hao Zhang, Pengzhan Liu, Yongjin Wang","doi":"10.1109/SSLChinaIFWS57942.2023.10071126","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071126","url":null,"abstract":"Compared with the direct modulation technology used in traditional visible light communication, the indirect modulation method can share a single light source in multiple channels, which features reduced system size and power consumption. In this paper, a near ultraviolet light modulator with InGaN/AlGaN multiple quantum well (MQW) structure is proposed based on GaN-on-silicon light-emitting diode (LED) wafer. Because the MQW diode structure is consistent with the light source and the photodetector (PD), the modulator can be monolithically integrated with the light source, PD, waveguide and other devices through compatible manufacturing processes. The MQW of the wafer is sandwiched by the waveguide layers and the light emitted by the light source is confined in the waveguide for transmission. The extinction ratio can be adjusted by changing the modulation voltage and the incident signal is loaded onto the optical carrier through the modulator. The optical signal is received by the MQW PD near the end of the waveguide and converted into electrical signal. The results show that the modulator has a significant modulation effect with the extinction ratio greater than 24.4 % and has important application prospects in light processing and transmission.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132394895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance optimization of deep ultraviolet laser diodes with superlattice hole blocking layer 具有超晶格孔阻挡层的深紫外激光二极管的性能优化
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071131
Liya Jia, Pengfei Zhang, Mengshuang Yin, Fang Wang, J. Liou, Yuhuai Liu
{"title":"Performance optimization of deep ultraviolet laser diodes with superlattice hole blocking layer","authors":"Liya Jia, Pengfei Zhang, Mengshuang Yin, Fang Wang, J. Liou, Yuhuai Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071131","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071131","url":null,"abstract":"In this paper, a superlattice hole blocking layer is proposed to reduce the hole leakage problem of AlGaN based deep ultraviolet laser diodes (DUV-LDs). Three kinds of laser diodes with conventional hole blocking layer, double-tapered hole blocking layer and superlattice hole blocking layer are simulated. It is found that the proposed superlattice hole blocking layer can effectively reduce the hole leakage in the n-region, improve the radiative recombination rate, and thus improve the optical and electrical properties of the device.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134400954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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