不同通道长度下1200V SiC MOSFET辐射强度的研究

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI:10.1109/SSLChinaIFWS57942.2023.10071136

Hongyi Xu, Na Ren, Zhengjia Chen, Zeyu Re, Xin Wan, Ji Cheng, Kuang Sheng

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引用次数: 0

摘要

本文制备了不同沟道长度的SiC MOSFET，并用钴-60 γ射线在不同偏置应力下辐照。实验研究了结构与闸门偏应力设计的协同效应。第三象限的导通电压可以判断通道漏电，指示器件的状态。在大剂量辐射下，较长的通道长度会抑制传导。分析了高辐射剂量下器件失效机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Investigation of 1200V SiC MOSFET Radiation Ruggedness with Different Channel Lengths

In this paper the SiC MOSFET with different channel length was fabricated and were irradiated with Cobalt-60 γ-ray under different bias stress. Synergetic effects of structure and gate bias-stress design is experimentally studied. The turn-on voltage in 3rd quadrant could determine the channel leakage and indicates the state of the device. Long channel length could inhibit the conduction under large dose of radiation. The device failure mechanism under high radiation dose is also analyzed.

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来源期刊

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)

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