The Investigation of 1200V SiC MOSFET Radiation Ruggedness with Different Channel Lengths

Abstract

In this paper the SiC MOSFET with different channel length was fabricated and were irradiated with Cobalt-60 γ-ray under different bias stress. Synergetic effects of structure and gate bias-stress design is experimentally studied. The turn-on voltage in 3rd quadrant could determine the channel leakage and indicates the state of the device. Long channel length could inhibit the conduction under large dose of radiation. The device failure mechanism under high radiation dose is also analyzed.