2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)最新文献_第2页

Thermal design of circular VCSEL arrays for optical output performance improvement 改进环形VCSEL阵列光输出性能的热设计

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071014

Guang-Xiang Fan, D. Jin, Wanrong Zhang, Xin Lei, Yu-Xin Zhou, Yuanda Liu

{"title":"Thermal design of circular VCSEL arrays for optical output performance improvement","authors":"Guang-Xiang Fan, D. Jin, Wanrong Zhang, Xin Lei, Yu-Xin Zhou, Yuanda Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071014","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071014","url":null,"abstract":"With the aid of the thermo-electro-optical model of two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays, the layout of circular VCSEL array is optimized to improve the optical output performance. Taking a circular VCSEL array with 19 cells (including 2 circles) for example, the impact of circle radius (r) and deviated angle from the symmetry center of the array (θ) on the non-uniformity of junction temperature profile are studied in detail. It is shown that increasing the inner circle radius r could decrease the peak junction temperature difference effectively. At the same time, the outer circle diameter is unchanged to keep the total area of the array remains the same. Moreover, the deviated angle θ could be designed carefully to further improve the non-uniformity of junction temperature profile. As a result, a novel circular VCSEL array with inner circle radius r of 42μm and deviated angle θ of 23° is proposed, where the non-uniformity of junction temperature profile and bias current distribution is improved by 43.66% and 44.07%, respectively, and hence enhance the optical output power, when compared with that of the conventional circular VCSEL array.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133013157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and simulation of GaN devices and integrated circuits using ASM compact HEMT model for mixed-signal applications 使用ASM紧凑型HEMT模型设计和模拟混合信号应用的GaN器件和集成电路

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071042

Shenkai Lu, Kaiwen Chen, Jiabao Liu, Pengju Cui, Ang Li, Wen Liu

引用次数: 1

A Simulation Study of Multi-Channel AlInN/GaN Schottky Barrier Diodes and Experimental Comparison with Low On-resistance of 1.9 Ω•mm 多通道AlInN/GaN肖特基势垒二极管的仿真研究及低导通电阻1.9 Ω•mm的实验比较

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070934

Yongxin Li, Ang Li, Chong Wang

{"title":"A Simulation Study of Multi-Channel AlInN/GaN Schottky Barrier Diodes and Experimental Comparison with Low On-resistance of 1.9 Ω•mm","authors":"Yongxin Li, Ang Li, Chong Wang","doi":"10.1109/SSLChinaIFWS57942.2023.10070934","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070934","url":null,"abstract":"In this work, a five channel lattice-matched AlInN/GaN heterostructure SBD is presented to improve the DC characteristics based on Silvaco-Atlas software and the simulation results. The influences of the number of channels, the thickness of the barrier layer, the In composition of the barrier layer, and the anode-cathode distance (Lac) are theoretically investigated. For an Al0.83In0.17N diode, compared with single channel devices, it offers a reduction of 68% in on-resistance, RON (from 6.25 to 1.98 Ω•mm), and 28% (from 1.25 to 0.91 V) in forward voltage, VF. The 2DEG sheet density increases significantly as the In composition decreases and the Al composition increases. When the thickness of the barrier layer increases, the confinement effect of the quantum well will strengthen, and the performance of SBD will be optimized. Finally, we demonstrated a five-channel AlInN/GaN heterojunction SBD sample with VF of 0.81 V and RON of 1.9 Ω•mm which is in high agreement with simulation results and is much better than those conventional AlGaN/GaN heterojunction SBDs with the same device area.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117217692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic-QGD of Enhancement-mode AlGaN/GaN MIS-HEMTs Induced by Bulk/Interface States in SiNx Passivation Dielectric SiNx钝化介质中体态/界面态诱导的增强模式AlGaN/GaN mishemts的动态qgd

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071109

Yixu Yao, Q. Jiang, Sen Huang, Xinhua Wang, Hao Jin, Xinyue Dai, Jie Fan, H. Yin, K. Wei, Xinyu Liu

引用次数: 0

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071021

Bin Chen, Chentao Cao, Xianghui Che, Yulong Fang

引用次数: 0

High-voltage Linear LED for Three-phase AC Power Applications 用于三相交流电源应用的高压线性LED

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070980

Xiu Zhang, Baoxing Wang, Shuqi Li, H. Guo, Rui Yue, Y. Cai

引用次数: 0

Research on monolithic integrated driver of Micro LED 微型LED的单片集成驱动研究

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071104

Fang Aoqi, G. Weiling, Xu Hao, Liu Jixin

{"title":"Research on monolithic integrated driver of Micro LED","authors":"Fang Aoqi, G. Weiling, Xu Hao, Liu Jixin","doi":"10.1109/SSLChinaIFWS57942.2023.10071104","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071104","url":null,"abstract":"Micro LED (light-emitting diode) is maturely used in the fields of space display, medical detection and visible light communication due to its unique features of miniaturization, low power consumption, fast response speed and high resolution. However, since the driver circuits are usually composed of Si devices, a large number of Micro LED pixels must be transferred from their GaN substrates to bond with Si field-effect transistors (FETs) by mass transfer techniques. Since there are certain technical bottlenecks in the mass transfer technology of Micro LED, relevant scholars at home and abroad have successively put forward the idea of integrating LED and field effect transistor driving circuit on the same substrate, so as to avoid the issues of low yield and poor accuracy. This paper summarizes the research on monolithic integrated active driving of LEDs and Micro LEDs at home and abroad in recent years. These researches include: monolithic integration of high mobility field effect transistors (HEMTs) and LEDs, metal oxide field effect transistors (MOSFET) and LED monolithic integration and thin film field effect transistor (TFT) monolithic integration with Micro LED.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123342285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Simulation of Quasi-Vertical GaN Based Junction Barrier Schottky Diode 准垂直GaN结势垒肖特基二极管的设计与仿真

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071124

Yalong Qin, Haijuan Cheng, Weiling Guo, Aoqi Fang, Jing Li, Haoran Guo

{"title":"Design and Simulation of Quasi-Vertical GaN Based Junction Barrier Schottky Diode","authors":"Yalong Qin, Haijuan Cheng, Weiling Guo, Aoqi Fang, Jing Li, Haoran Guo","doi":"10.1109/SSLChinaIFWS57942.2023.10071124","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071124","url":null,"abstract":"In order to improve the reverse breakdown characteristics of quasi-vertical GaN-based Schottky barrier diode (SBD), a junction barrier Schottky diode (JBS) is designed in this paper, and device modeling and characteristic simulation are carried out. Comparing the SBD and JBS devices with the same epitaxial structure, the breakdown voltages of the devices are 310V and 1145V, respectively. Compared to SBD devices, JBS has a higher breakdown voltage. In order to continue to improve the performance of the device, after optimizing the thickness of the N-GaN drift layer of the JBS device, it is found that increasing the thickness of the N-GaN drift layer can effectively improve the breakdown voltage of the JBS, but the on-resistance of the device also increases slightly. The breakdown voltage of the optimized JBS device is 1812V; the ratio of the area of the Schottky contact area to the area of the PiN area will also affect the performance of the vertical JBS device, and the area ratio of the Schottky contact area is increased from 0.379 to 0.67, the on-resistance of the device is reduced from 1.097mΩ•cm2 to 0.747 mΩ•cm2, and the reverse breakdown voltage is slightly reduced. The research results provide a theoretical reference for device structure design and process fabrication.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127972979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of low-noise multi-channel active surface electromyography acquisition equipment 低噪声多通道主动表面肌电图采集设备的设计

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071075

Nan Jiang, A. Guo, Qiang Lei, Zhigan Wang

引用次数: 1

Enhanced Performance of a Metal-insulator-semiconductor Structured p/n-Electrode for InGaN-based Green LEDs 用于ingan基绿色led的金属-绝缘体-半导体结构p/n电极的增强性能

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071078

Huang Wenjun, Miao Xiangyu, Liu Zhaojun

引用次数: 0