Dynamic-QGD of Enhancement-mode AlGaN/GaN MIS-HEMTs Induced by Bulk/Interface States in SiNx Passivation Dielectric

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI:10.1109/SSLChinaIFWS57942.2023.10071109

Yixu Yao, Q. Jiang, Sen Huang, Xinhua Wang, Hao Jin, Xinyue Dai, Jie Fan, H. Yin, K. Wei, Xinyu Liu

{"title":"Dynamic-QGD of Enhancement-mode AlGaN/GaN MIS-HEMTs Induced by Bulk/Interface States in SiNx Passivation Dielectric","authors":"Yixu Yao, Q. Jiang, Sen Huang, Xinhua Wang, Hao Jin, Xinyue Dai, Jie Fan, H. Yin, K. Wei, Xinyu Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071109","DOIUrl":null,"url":null,"abstract":"Effect of bulk/interface states in passivation dielectrics on dynamic gate-drain capacitance (CGD) and QGD of GaN-based power devices, was systematically investigated by inductive-load switching, voltage/temperature-dependent capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS). DLTS measurements confirm that a continuous distributed bulk state with activation energy (EC-ET) higher than 1.1 ± 0.05 eV, presents in SiNx passivation dielectric grown by low-pressure chemical vapor deposition (LPCVD). It is revealed that the trapping/de-trapping of these bulk states will give rise to QGD instability in T-shape gate enhancement-mode (E-mode) AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high-electron-mobility transistors), leading to undesirable degradation of switching characteristics.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

Effect of bulk/interface states in passivation dielectrics on dynamic gate-drain capacitance (CGD) and QGD of GaN-based power devices, was systematically investigated by inductive-load switching, voltage/temperature-dependent capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS). DLTS measurements confirm that a continuous distributed bulk state with activation energy (EC-ET) higher than 1.1 ± 0.05 eV, presents in SiNx passivation dielectric grown by low-pressure chemical vapor deposition (LPCVD). It is revealed that the trapping/de-trapping of these bulk states will give rise to QGD instability in T-shape gate enhancement-mode (E-mode) AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high-electron-mobility transistors), leading to undesirable degradation of switching characteristics.

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SiNx钝化介质中体态/界面态诱导的增强模式AlGaN/GaN mishemts的动态qgd

采用电感负载开关、电压/温度相关电容电压(C-V)和深能级瞬态光谱(DLTS)系统研究了钝化介质中本体/界面状态对gan基功率器件动态栅漏电容(CGD)和QGD的影响。DLTS测量证实，低压化学气相沉积(LPCVD)法制备的SiNx钝化介质呈现连续分布体态，活化能(EC-ET)大于1.1±0.05 eV。在t形栅增强模式(e模式)AlGaN/GaN高电子迁移率晶体管(金属-绝缘体-半导体高电子迁移率晶体管)中，这些体态的捕获/解捕获将导致QGD不稳定，导致开关特性的不良退化。

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来源期刊

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)

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