2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)最新文献_第3页

Influence of patterned graphene mask on nucleation behavior of GaN by MOCVD 图案石墨烯掩膜对氮化镓MOCVD成核行为的影响

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071116

Jianjie Li, Yu Xu, Jiahao Tao, Xin Cai, Yuning Wang, Guobin Wang, B. Cao, Ke Xu

{"title":"Influence of patterned graphene mask on nucleation behavior of GaN by MOCVD","authors":"Jianjie Li, Yu Xu, Jiahao Tao, Xin Cai, Yuning Wang, Guobin Wang, B. Cao, Ke Xu","doi":"10.1109/SSLChinaIFWS57942.2023.10071116","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071116","url":null,"abstract":"We investigated the nucleation behavior of GaN on GaN templates with different periods of graphene masks. It is difficult to ensure the integrity of graphene due to defects such as breakages and wrinkles during the transfer process. Researchers [1]-[2] found that GaN not only nucleates in the window region, but also nucleates at these defects on the graphene mask, and the nucleation mode is different from that on the dielectric mask. Therefore, we plan to enhance the migration of Ga atoms to the window region for nucleation by adjusting the mask period. By comparing the island coverage ratio of GaN on different periods of graphene masks. We found that the island coverage of GaN on graphene masks is sensitive to the change of mask width for samples with windows of 3μm, where the mask-to-periodic width ratio (duty ratio) is less than 0.85. For the samples with windows of 5 gm, the interaction between island coverage ratio and duty ratio was mildly. Both samples with different window widths exhibited a decreasing trend of island coverage ratio with increasing duty ratio, and samples with wider window are more likely to decrease the island nucleation density on graphene masks at low duty ratio. We observed that the GaN strips formed on the window were larger in size and had a distinct semipolar plane {11-2n} in the sample with larger duty ratio. This article focuses on the relationship between the graphene mask period and the nucleation of GaN. These results provide fundamental support for the growth of high quality III-nitrides compounds using graphene masks by epitaxial lateral overgrowth (ELOG).","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"26 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127652452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On-road projection symbols for future vehicles: A survey study for Chinese roads 未来车辆的道路投影符号:中国道路的调查研究

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071038

Xiaodong Sun, Ali Hassan Shah, Jinlong Ao, Wenqing Miao, Yandan Lin, Wenfang Chen

{"title":"On-road projection symbols for future vehicles: A survey study for Chinese roads","authors":"Xiaodong Sun, Ali Hassan Shah, Jinlong Ao, Wenqing Miao, Yandan Lin, Wenfang Chen","doi":"10.1109/SSLChinaIFWS57942.2023.10071038","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071038","url":null,"abstract":"The automotive industry offers a variety of external human-machine interfaces (eHMIs) for autonomous vehicles (AVs), as cars now need to be driven more safely and so-called eHMIs can be used to compensate for the lack of human communication in cars. Various designs have been proposed by industry and academia, but there seems to be no consensus on which type of eHMI should be used.Here,we examine the topics of images, video, text, etc. The focus of this study is on the concept of eHMI: road image projection for DMD-based lighting systems from the automotive industry.Based on the findings of the literature, we tried to design a comprehensive, transferable and simple projection notation that would meet all current standards of automotive manufacturers.These eHMI projection symbols were presented to Chinese drivers to solicit their views on these symbols.In the survey, respondents lied about the clarity of the 12 images, videos and drawings provided by the automotive industry. According to the results of the survey, the Chinese prefer simple projections without complex patterns in them. These efforts are very valuable for industry and scientific research.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133148012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts 肖特基/欧姆栅极触点P-GaN hemt的比较研究

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071028

W. Lu, Kailin Ren, Y. An, Zhuang Wu, Luqiao Yin, Jianhua Zhang

{"title":"A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts","authors":"W. Lu, Kailin Ren, Y. An, Zhuang Wu, Luqiao Yin, Jianhua Zhang","doi":"10.1109/SSLChinaIFWS57942.2023.10071028","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071028","url":null,"abstract":"P-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is currently the mainstream solution to realize enhancement mode GaN-based power electronic devices, but the influence of Schottky contact or ohmic contact on the device characteristics is still an issue to be further comparatively studied. In this paper, the impacts of Schottky and ohmic-type gate contacts on device performances such as transfer characteristics, transconductance and breakdown voltage of p-GaN gate AlGaN/GaN HEMT devices were studied by TCAD simulation. In Schottky-gate devices, the gate leakage is lower, and a larger threshold voltage (>6V) can be obtained by adjusting the parameters of the p-GaN cap layer, but as the threshold voltage increases, the drain current density will be correspondingly suppressed. In contrast, the threshold voltage of ohmic-gate devices is relatively stable and the drain current density is larger. In addition, ohmic-gate devices exhibit superior voltage withstand capability, but ohmic-type gate devices suffer serious gate leakage problem. Then the influence of Schottky- and ohmic- gate contacts on the stability of p-GaN gate AlGaN/GaN HEMT is studied. It is found that the threshold voltage of both devices is unstable.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123017891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lowering Power Consumption for Organic Light-Emitting Diodes Full-Screen Display 降低有机发光二极管全屏显示的功耗

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071114

Zhiyong Xiong, Haimin Liu, Pengjuan Zhu

引用次数: 2

Thermal characteristics analysis and optimization of 3D-Stacked Memory Packaging 3d堆叠内存封装热特性分析与优化

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071101

Fengzhe Cao, Wen Yang, Minghui Yun, Daoguo Yang

引用次数: 0

Optimize Screen CCTs in 3000K and 5000K Ambient CCTs 在3000K和5000K环境下优化屏幕cct

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071046

Shanshan Zeng, Wentao Hao, Ya Guo, Guanheng Li, Wenxue Li, Caiqin Chen, Zuqiang Zhang, Deshun Qu, Shengli Zhang, Xingxing Qin, Jianqi Cai

引用次数: 0

Ag-based hollow reflective electrode on thin p-GaN layer for improving the light output efficiency of AlGaN-based deep-ultraviolet light-emitting diodes 薄p-GaN层上银基中空反射电极，用于提高gan基深紫外发光二极管的光输出效率

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070972

S. Pan, Kuili Chen, Yan Guo, Zexiang Liu, Yugang Zhou, Rong Zhang, Youdou Zheng

引用次数: 0

Analysis and research on color parameter drift and thermal properties of packaged light source applied in education 教育用封装光源色参数漂移及热性能分析与研究

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070933

Rui Yin, Xiaorui Song, Xiaoyu Fang, Jianguo Zhao, Shuchang Wang, Zhijiang Sun

{"title":"Analysis and research on color parameter drift and thermal properties of packaged light source applied in education","authors":"Rui Yin, Xiaorui Song, Xiaoyu Fang, Jianguo Zhao, Shuchang Wang, Zhijiang Sun","doi":"10.1109/SSLChinaIFWS57942.2023.10070933","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070933","url":null,"abstract":"With the development of chip scale package (CSP) light-emitting diode (LED) technology, this technology is more and more widely concerned and applied in semiconductor lighting industry. When LED is used in the lighting on education, its characteristics such as color rendering index (CRI) and color temperature are particularly important. This paper introduces one design of CSP LED with 630 nm K2SiF6 (KSF) fluoride phosphors in the mixed phosphors layer. The spectral characteristics, color parameter drift and thermal characteristics of the CSP LED are studied. The CSP technology achieve high CRI (>95) along with high luminous efficacy (158.81 lm/W). The results show that: 1) The driving current and temperature have different effects on the optical, color parameter drift and thermal properties of the device; 2) The added KSF fluoride phosphors expand the luminescence spectrum distribution and improves the luminescence intensity, especially in the red band (600 nm~650 nm); 3) The CRI is improved without significant reduction in luminous efficiency, and it achieved the trade-off between CRI and luminous efficiency.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126815299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation Study on the Size Effect and Transient Characteristics of Micro-LEDs 微型led尺寸效应及瞬态特性的仿真研究

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070998

Zhuang Wu, Kailin Ren, Y. An, Luqiao Yin, Xiuzhen Lu, A. Guo, Jianhua Zhang

{"title":"Simulation Study on the Size Effect and Transient Characteristics of Micro-LEDs","authors":"Zhuang Wu, Kailin Ren, Y. An, Luqiao Yin, Xiuzhen Lu, A. Guo, Jianhua Zhang","doi":"10.1109/SSLChinaIFWS57942.2023.10070998","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070998","url":null,"abstract":"Micro-LED is a promising candidate of the next generation display technology. The size effect caused by sidewall surface traps is a serious issue that restricts its industrialization progress. However, the current research on the size effect of micro-LED is limited to the reduce of quantum efficiency and luminous intensity with decreased pixel size, but there is few research on the mechanism of the transient switching characteristics of Micro-LED affected by sidewall surface traps. In this paper, the size effect of GaN based micro-LEDs is studied by TCAD simulation. The decrease of quantum efficiency is attributed to the depletion effect of the sidewall traps induced by dry etching, the enhancement of SRH non-radiative recombination, and the lateral current component caused by sidewall traps capturing carriers. In addition, the sidewall trap density and trap energy level of micro-LEDs with 10 μm pixel size were varied to study their influence on the transient switching characteristics of micro-LEDs. This work provides a design guideline for the process control of micro-LEDs.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126698184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Critical aspects of deep-UV LED design and operation 深紫外LED设计和操作的关键方面

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071057

Mao Yanlin, K. Bulashevich

引用次数: 1