Thermal characteristics analysis and optimization of 3D-Stacked Memory Packaging

Fengzhe Cao, Wen Yang, Minghui Yun, Daoguo Yang
{"title":"Thermal characteristics analysis and optimization of 3D-Stacked Memory Packaging","authors":"Fengzhe Cao, Wen Yang, Minghui Yun, Daoguo Yang","doi":"10.1109/SSLChinaIFWS57942.2023.10071101","DOIUrl":null,"url":null,"abstract":"With the increase of power consumption and running speed, the junction temperature of three-dimensional stacked memory devices has increased. It eventually leads to chip overheating and may cause device failures. It is essential to analyze and optimize the thermal performance of the package. In this paper, the finite element analysis method is used to study the influence of the package module on the chip junction temperature and thermal resistance for the typical six-layer stacked memory chip packaging structure. The main influencing factors are investigated. In addition, the thermal characteristics of the stacked packaging structure are optimized by using the orthogonal experimental design method. After further optimization, the junction temperature decreases by 7.17% and the thermal resistance decreases by 11.59%.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

With the increase of power consumption and running speed, the junction temperature of three-dimensional stacked memory devices has increased. It eventually leads to chip overheating and may cause device failures. It is essential to analyze and optimize the thermal performance of the package. In this paper, the finite element analysis method is used to study the influence of the package module on the chip junction temperature and thermal resistance for the typical six-layer stacked memory chip packaging structure. The main influencing factors are investigated. In addition, the thermal characteristics of the stacked packaging structure are optimized by using the orthogonal experimental design method. After further optimization, the junction temperature decreases by 7.17% and the thermal resistance decreases by 11.59%.
3d堆叠内存封装热特性分析与优化
随着功耗和运行速度的提高,三维堆叠存储器件的结温也随之升高。它最终会导致芯片过热,并可能导致设备故障。分析和优化封装的热性能是至关重要的。本文采用有限元分析方法,研究了典型六层堆叠存储芯片封装结构中封装模块对芯片结温和热阻的影响。研究了主要影响因素。此外,采用正交实验设计方法对堆叠封装结构的热特性进行了优化。进一步优化后,结温降低7.17%,热阻降低11.59%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信