Ag-based hollow reflective electrode on thin p-GaN layer for improving the light output efficiency of AlGaN-based deep-ultraviolet light-emitting diodes

S. Pan, Kuili Chen, Yan Guo, Zexiang Liu, Yugang Zhou, Rong Zhang, Youdou Zheng
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Abstract

In this work, we used an Ag-based hollow reflective electrode on thin p-GaN to enhance the light output power (LOP). Light emitted in the region between the square Ag/Ti arrays will be reflected by the Al reflective mirror enhancing the LOP. The smaller size of square Ag/Ti arrays is better for I-V characteristics and LOP. Within the range of the coverage ratios of square Ag/Ti arrays in our work, an 8.6% increase in the LOP was got. we speculate that larger coverage ratios can improve the LOP further. The design of square Ag/Ti arrays/Al p-electrodes will be an excellent technique to enhance light extraction.
薄p-GaN层上银基中空反射电极,用于提高gan基深紫外发光二极管的光输出效率
在这项工作中,我们在薄p-GaN上使用ag基中空反射电极来提高光输出功率(LOP)。在方形Ag/Ti阵列之间的区域发射的光将被Al反射镜反射,增强了LOP。方形Ag/Ti阵列尺寸越小,其I-V特性和LOP越好。在我们的工作中,方形Ag/Ti阵列的覆盖率范围内,LOP提高了8.6%。我们推测,更大的覆盖率可以进一步提高LOP。方形Ag/Ti阵列/Al - p电极的设计将是增强光提取的一种极好的技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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