Study on High-Linearity Devices Based on Double-Channel AlGaN/GaN FinFET Structure

Abstract

The DC and RF characteristics of double-channel AlGaN/GaN FinFETs are analyzed. The linear operating characteristics of the double-channel AlGaN/GaN FinFET are investigated in detail. The simulated results show that the double-channel AlGaN/GaN heterostructure with doped barriers can improve the drain current, and the FinFET structure can enhance the control of the gate to the channel. The combination of FinFET structure and double-channel AlGaN/GaN heterostructure improves the gate voltage swing under DC conditions. The double-channel FinFET can effectively improve the gate bias-dependent current-gain cutoff frequency(fT) and unit-power-gain frequency(fmax) behaviors, which correlates with the broader transconductance characteristic of the double-channel FinFET.