Performance optimization of deep ultraviolet laser diodes with superlattice hole blocking layer

In this paper, a superlattice hole blocking layer is proposed to reduce the hole leakage problem of AlGaN based deep ultraviolet laser diodes (DUV-LDs). Three kinds of laser diodes with conventional hole blocking layer, double-tapered hole blocking layer and superlattice hole blocking layer are simulated. It is found that the proposed superlattice hole blocking layer can effectively reduce the hole leakage in the n-region, improve the radiative recombination rate, and thus improve the optical and electrical properties of the device.