2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)最新文献

{"title":"Investigation of Lateral Gallium Oxide MOSFET with Discrete Field Plate by Calibrated Numerical Simulation","authors":"Lei Wang, Maolin Zhang, Zeng Liu, Lili Yang, Shan Li, W. Tang, Yufeng Guo","doi":"10.1109/SSLChinaIFWS57942.2023.10070995","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070995","url":null,"abstract":"The main barrier preventing the simulation design and optimization of wide bandgap semiconductor power devices is poor numerical convergence. Currently, the uncalibrated two-dimensional electric field distribution is the main foundation for the breakdown voltage optimization of gallium oxide power devices. This work achieves proper calibration of the current-voltage (I-V) characteristics as well as the breakdown voltage evaluation by enhancing the numerical method. An optimal set of structural parameters for a lateral gallium oxide MOSFET with a discrete field plate is designed using the suggested method. Thanks to the improved electric field profile, the breakdown voltage is increased by 19.7%, and on-state resistance did not degrade. This work resolves the wide-bandgap semiconductors' poor convergence problem and offers a workable strategy for the subsequent theoretical simulation and optimization of gallium oxide power devices.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126781435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation and Characterization Studies of GaN-Based Quasi-Vertical MIS SBD","authors":"Jing Li, Haijuan Cheng, Yalong Qin, Xiucheng Xu, Wei-ling Guo","doi":"10.1109/SSLChinaIFWS57942.2023.10070950","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070950","url":null,"abstract":"In order to improve the performance of GaN-based quasi-vertical MIS SBD, this paper proposes and designs a new MIS SBD with MIS (metal-insulation-semiconductor) terminal structure, and optimizes its structural parameters via simulation. The characteristic simulation result shows that the on-resistance of conventional quasi-vertical SBD and new quasi-vertical MIS SBD are 0.565mΩ•cm2 and 0.556mΩ•cm2 respectively. And the breakdown voltage is increased from 632V to 1056V. After optimization, including the length and thickness of the insulation dielectric layer and the thickness of N-GaN layer, the on-resistance of quasi-vertical MIS SBD increases slightly to 0.648mΩ•cm2, but the breakdown voltage reaches 1624V. Besides, the new structure can effectively alleviate the current crowding phenomenon, alleviate the peak electric field at the edge of the anode in reverse bias, and make the electric field distribution in the device more uniform.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127438179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"1200 V 14 mΩ SiC MOSFET with Low Specific On-Resistance of 3.3 mΩ cm2","authors":"Yuan-Lan Zhang, Wenhua Shi, Guang-Yin Lei, Qingchun Jon Zhang","doi":"10.1109/SSLChinaIFWS57942.2023.10071073","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071073","url":null,"abstract":"Benefitted from the high switching frequency, knee-free driving voltage, and a natural reverse recovery body diode, SiC MOSFETs are regarded as the most potential candidate to take place of Si IGBT in 600V-3300V power applications. Pursuing lower specific on-resistance (Rsp,on) at certain rated voltages is the critical aim for more advanced devices with smaller size and higher efficiency. Here, we represent a successful design and fabrication of 1200V/14mΩ 4H-SiC MOSFET with ultra-low specific on-resistances of 3.3 mΩ cm2 at 25 ℃ and 6.4 mΩ cm2 at 150 ℃, showing a desired positive resistance temperature coefficient. A detailed analysis has been made with respect to the static and dynamic characteristics, third quadrant conduction, and body diode, etc.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126294736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Efficiency Nitride Green LEDs with Built-in PL Color Converter","authors":"C. Yan, Y. H. Du, W. Sun, A. L. Yang, D. W. Nie, B. B. Shen, C. Yu","doi":"10.1109/SSLChinaIFWS57942.2023.10071052","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071052","url":null,"abstract":"The well-known \"Green gap\" issue related to LEDs efficiency significantly limits the full color applications in both display and lighting. In order to solve this problem, in this study, a new green LED structure is proposed, which includes a regular short wavelength MQWs for the electroluminescence (EL) emission, and a green photoluminescence (PL) color conversion region, so called EP-LED. The shorter wavelength EL region is responsible for carrier injection and recombination, which suffers from a much weaker QCSE, and the longer wavelength PL region is responsible for high quantum efficiency color conversion, whose strain field has no effect on carrier injection. With this novel hybrid active-region design, the green EP-LED shows more than 30% improved WPE over the conventional one at current density of 50 A/cm2, and 1/3 suppressed blueshift in wavelength in the current range of 1 mA to 100 mA, as well as the much-reduced efficiency Droop. It is very encouraging that the green or long wavelength EP-LEDs will meet many new needs in future display and lighting applications.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121405784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Demonstration of an 1200V/20A 4H-SiC Multi-Step Trenched Junction Barrier Schottky Diode","authors":"Jun Yuan, Fei Guo, Kuan Wang, Ningyu Liu, Chang Wu, Bing Yang","doi":"10.1109/SSLChinaIFWS57942.2023.10071062","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071062","url":null,"abstract":"In this study, we have realized a novel 1200 V 4H-SiC Multi-step trenched junction barrier Schottky (MTJBS) diodes with ultra-low leakage current. The MTJBS diode substantially alleviates the tradeoff dilemma between forward voltage drop and blocking voltage, thus enabling a larger design window that effective reverse blocking and excellent forward conduction can be achieved at the same time. Design considerations and device performances of the Multi-step trenched JBS devices are compared with those of the conventional planar JBS diodes via numerical simulation and analyses. It is demonstrated that the shielding effect of the conventional structure under high voltage remain effective only when the junction spacing is narrow (n<2μm), while the surface electric field of 4H-SiC Multi-step trenched JBS diode is decreased significantly by the deep barrier shielding layer. The surface electric field is only 0.18–0.95 MV/cm2 for 4H-SiC Multi-step trenched JBS diode with a varied junction spacing from 1 to 3 μm. When the surface electric field reach 1MV/cm2, the junction spacing of Multi-step trenched JBS diode is wider to 3 μm in comparision with 0.7 μm junction spacing of the conventional JBS diodes. Moreover, first demonstration of the MTJBS prototype fabrication and device characterization are also detailed in this study. The reverse leakage current with the MTJBS structure has been reduced by 2 orders of magnitude compared to the conventional planar JBS structure.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131249662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compact fluorescence detection system based on self- filtering illumination GaN-based quantum well diodes","authors":"Jianwei Fu, Jiabin Yan, Ziqi Ye, Yongjin Wang","doi":"10.1109/SSLChinaIFWS57942.2023.10071134","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071134","url":null,"abstract":"The fluorescence detection is one of the most widely used techniques for living cells/tissue imaging and antigens/antibodies recognition in bioresearch and medical diagnosis, determination of specified ions or gas in environmental monitoring , and even strain/ temperature measurement. The III-Nitride MQW LED is an ideal excitation light source for the fluorescence detection system, because it has the advantages of low power consumption, long lifetime, high reliability, compact structure and so on. Here, we report a compact fluorescence detection system based on monolithic DBR-integrated III-Nitride LED chip and demonstrate its application for fluorescence sensor. The applications of the proposed detection system for fluorescence sensor and imaging have been successfully demonstrated. The traditional discrete light source and filter are integrated on a single chip for the proposed system, which not only realizes the separation between excitation and fluorescent lights, but also improves the LED light extraction efficiency. The DBR filter directly covers the back of the sapphire substrate of the uniform luminescent LED. As an optical filter, the DBR has specific wavelength selectivity, while its reflected light helps to increase the radiation flux. Most of the excited blue light is reflected by the filter, and the upward propagating fluorescent red light can pass through the filter. Furthermore, the detection system allows for a removable sample unit and the requirement on sample preparation is much lower. The results indicate that the performance of DBR filter based on amorphous dielectric film is excellent. Therefore, our proposed fluorescence imaging system can effectively avoid the interference of excitation light and greatly reduce the total size of the system, which is conducive to portable applications and field tests. In addition, the cost of the detection system can be greatly reduced because the chip level integrated components in the detection system allow mass production.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134326943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wearable laser Doppler based on VCSEL and its application in human blood flow","authors":"Hualiang Zhang, Jinjiang Cui, Xiaoman Xing, Jian-gen Xu","doi":"10.1109/SSLChinaIFWS57942.2023.10070969","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070969","url":null,"abstract":"A wearable microcirculation detection device based on VCSEL with high optical speed vertical cavity surface emission laser chip and three-axis acceleration sensor were used in the continuous detection experiment of human microcirculation .20 people of different ages were tested reactive hyperemia of fingers under different pressures on the upper arm(The experiment was divided into two groups. In the first group we continuously changed the pressure, increased the pressure from 0mmHg to 180mmHg. When the pressure reached 0, 100, 150, 180mmHg, the constant pressures was maintained for 1 minute respectively to observe blood flow waveform. In the second group we directly increased the pressure to 180mmHg, and then released the pressure after 3 minutes.). Test results indicate that; Blood flow changed more slowly when the pressure was 0mmHg to 100mmHg. From 100mmHg to 150mmHg, the blood flow had a pulsating waveform with the heart beating, and the blood flow decreased gradually. From 150mmHg to 180mmHg, blood flow varied greatly and decreased to a minimum after the pressure reached 180mmHg and did not change significantly as the pressure increased. When the pressure was released, the Blood flow rose rapidly from the lowest to a peak and then gradually returned to normal state. Compared with young people under 30 years old, the blood flow of the elderly recovered more slowly, and the peak of the blood flow was lower than that of the young. The two groups of experiments can distinguish the difference of age.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134013565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High performance 1200V SiC MOSFET platform with AEC-Q101 certificate","authors":"Wenhua Shi, Qingchun Jon Zhang","doi":"10.1109/SSLChinaIFWS57942.2023.10070927","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070927","url":null,"abstract":"A high-performance 1200V 4H-SiC MOSFET platform has been successfully developed with the reliability certification of vehicle specification. In this paper, fabrication, electrical characterization, and reliability certification of 1200V 4H-SiC MOSFET are reported. By optimizing device structure and fabrication process, a low specific on-resistance (Rsp,on) of 3.3 mΩ*cm2 of 4H-SiC MOSFETs has been achieved on 1200V rated products, and very efficient 1200V/75mΩ 4H-SiC DMOSFETs were successfully fabricated. The highly reliable 1200V 4H-SiC MOSFET platform has been awarded the AEC-Q101 certificate by MOSFET reliability certification organization.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127858750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs","authors":"Yujie Jiao, J. Zhang, Pan Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071040","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071040","url":null,"abstract":"Silicon carbide (SiC) MOSFET power devices have received increasing attention, due to its wide band gap, high thermal conductivity, high critical breakdown field strength, and high carrier saturation velocity, etc. Major semiconductor device manufacturers have introduced series of commercial SiC MOSFET products, focusing on high-power applications with high reliability. In practical circuits, the main failure root of SiC MOSFET power devices is avalanche breakdown. The avalanche characteristics and the underlying mechanisms of SiC devices are different from those of Si devices. However, the avalanche tolerance and other parameters of SiC MOSFET are barely included in the current manufacturer's data sheet and related research so far. Therefore, it is of great importance to study the avalanche tolerance of SiC MOSFETs. In this review, we summarized the setups for avalanche tolerance test, mainly focused on unclamped inductive switching tests. Then, the avalanche test results of 650V, 900V, 1200V and 10kV SiC MOSFETs were described according to the voltage level. Next, different theories on the failure mechanism of SiC MOSFET were introduced. Finally, the deficiencies of current research and possible future research directions were proposed. In summary, this paper provides a comprehensive review of avalanche test setup, test results and avalanche failure analysis, and future development trends of SiC MOSFET power devices.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114845028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of the spectrum of all-day LED lighting on human daytime and nighttime performance","authors":"Nuoyi Li, Sicong Zhou, Wenqing Miao, Congshan Dai, Ali Hassan Shah, Yandan Lin","doi":"10.1109/SSLChinaIFWS57942.2023.10071053","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071053","url":null,"abstract":"Indoor LED lighting is directly related to people’s health and performance. This experiment investigated the effect of the spectrum of LED lighting on human daytime and nighttime performance. Six different LEDs were selected for the experiment: ordinary LEDs and daylight LEDs that mimic the full spectrum, with CCTs of 2700K, 4000K, and 5000K for each spectral type (2 spectral types * 3 CCT). A total of 24 subjects participated in the experiment. Each subject was assigned to a specific CCT and experienced two spectral types on different days. Subjects were given a predetermined light exposure for 12 hours a day for each experiment. By analyzing the subjects' performance during the daytime light exposure and nighttime sleep quality after, we found that daytime exposure to light with stronger non-visual stimulus led to higher daytime alertness and better nighttime sleep quality, and the lack of daytime light stimuli led to poor night sleep quality. However, changes in spectral composition within a small range were not enough to cause a sufficiently significantly improve in daily human performance.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124092667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}