{"title":"碳化硅功率mosfet的雪崩容限研究进展","authors":"Yujie Jiao, J. Zhang, Pan Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10071040","DOIUrl":null,"url":null,"abstract":"Silicon carbide (SiC) MOSFET power devices have received increasing attention, due to its wide band gap, high thermal conductivity, high critical breakdown field strength, and high carrier saturation velocity, etc. Major semiconductor device manufacturers have introduced series of commercial SiC MOSFET products, focusing on high-power applications with high reliability. In practical circuits, the main failure root of SiC MOSFET power devices is avalanche breakdown. The avalanche characteristics and the underlying mechanisms of SiC devices are different from those of Si devices. However, the avalanche tolerance and other parameters of SiC MOSFET are barely included in the current manufacturer's data sheet and related research so far. Therefore, it is of great importance to study the avalanche tolerance of SiC MOSFETs. In this review, we summarized the setups for avalanche tolerance test, mainly focused on unclamped inductive switching tests. Then, the avalanche test results of 650V, 900V, 1200V and 10kV SiC MOSFETs were described according to the voltage level. Next, different theories on the failure mechanism of SiC MOSFET were introduced. Finally, the deficiencies of current research and possible future research directions were proposed. In summary, this paper provides a comprehensive review of avalanche test setup, test results and avalanche failure analysis, and future development trends of SiC MOSFET power devices.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs\",\"authors\":\"Yujie Jiao, J. Zhang, Pan Liu\",\"doi\":\"10.1109/SSLChinaIFWS57942.2023.10071040\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon carbide (SiC) MOSFET power devices have received increasing attention, due to its wide band gap, high thermal conductivity, high critical breakdown field strength, and high carrier saturation velocity, etc. Major semiconductor device manufacturers have introduced series of commercial SiC MOSFET products, focusing on high-power applications with high reliability. In practical circuits, the main failure root of SiC MOSFET power devices is avalanche breakdown. The avalanche characteristics and the underlying mechanisms of SiC devices are different from those of Si devices. However, the avalanche tolerance and other parameters of SiC MOSFET are barely included in the current manufacturer's data sheet and related research so far. Therefore, it is of great importance to study the avalanche tolerance of SiC MOSFETs. In this review, we summarized the setups for avalanche tolerance test, mainly focused on unclamped inductive switching tests. Then, the avalanche test results of 650V, 900V, 1200V and 10kV SiC MOSFETs were described according to the voltage level. Next, different theories on the failure mechanism of SiC MOSFET were introduced. Finally, the deficiencies of current research and possible future research directions were proposed. In summary, this paper provides a comprehensive review of avalanche test setup, test results and avalanche failure analysis, and future development trends of SiC MOSFET power devices.\",\"PeriodicalId\":145298,\"journal\":{\"name\":\"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-02-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071040\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071040","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
碳化硅(SiC) MOSFET功率器件由于具有带隙宽、导热系数高、临界击穿场强高、载流子饱和速度快等优点,越来越受到人们的关注。主要半导体器件制造商推出了一系列商业化的SiC MOSFET产品,专注于高可靠性的高功率应用。在实际电路中,SiC MOSFET功率器件的主要故障根源是雪崩击穿。SiC器件的雪崩特性及其机理与Si器件不同。然而,SiC MOSFET的雪崩容限等参数目前在厂商的数据表和相关研究中几乎没有涉及。因此,研究碳化硅mosfet的耐雪崩性具有重要意义。本文综述了雪崩容限测试的设置,重点介绍了无箝位电感开关测试。然后,根据电压等级描述了650V、900V、1200V和10kV SiC mosfet的雪崩试验结果。其次,介绍了SiC MOSFET失效机理的不同理论。最后,提出了当前研究的不足和未来可能的研究方向。综上所述,本文全面综述了雪崩测试装置、测试结果和雪崩失效分析,以及SiC MOSFET功率器件的未来发展趋势。
Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs
Silicon carbide (SiC) MOSFET power devices have received increasing attention, due to its wide band gap, high thermal conductivity, high critical breakdown field strength, and high carrier saturation velocity, etc. Major semiconductor device manufacturers have introduced series of commercial SiC MOSFET products, focusing on high-power applications with high reliability. In practical circuits, the main failure root of SiC MOSFET power devices is avalanche breakdown. The avalanche characteristics and the underlying mechanisms of SiC devices are different from those of Si devices. However, the avalanche tolerance and other parameters of SiC MOSFET are barely included in the current manufacturer's data sheet and related research so far. Therefore, it is of great importance to study the avalanche tolerance of SiC MOSFETs. In this review, we summarized the setups for avalanche tolerance test, mainly focused on unclamped inductive switching tests. Then, the avalanche test results of 650V, 900V, 1200V and 10kV SiC MOSFETs were described according to the voltage level. Next, different theories on the failure mechanism of SiC MOSFET were introduced. Finally, the deficiencies of current research and possible future research directions were proposed. In summary, this paper provides a comprehensive review of avalanche test setup, test results and avalanche failure analysis, and future development trends of SiC MOSFET power devices.