1200 V 14 mΩ SiC MOSFET with Low Specific On-Resistance of 3.3 mΩ cm2

Benefitted from the high switching frequency, knee-free driving voltage, and a natural reverse recovery body diode, SiC MOSFETs are regarded as the most potential candidate to take place of Si IGBT in 600V-3300V power applications. Pursuing lower specific on-resistance (Rsp,on) at certain rated voltages is the critical aim for more advanced devices with smaller size and higher efficiency. Here, we represent a successful design and fabrication of 1200V/14mΩ 4H-SiC MOSFET with ultra-low specific on-resistances of 3.3 mΩ cm2 at 25 ℃ and 6.4 mΩ cm2 at 150 ℃, showing a desired positive resistance temperature coefficient. A detailed analysis has been made with respect to the static and dynamic characteristics, third quadrant conduction, and body diode, etc.