{"title":"高性能1200V SiC MOSFET平台，通过AEC-Q101认证","authors":"Wenhua Shi, Qingchun Jon Zhang","doi":"10.1109/SSLChinaIFWS57942.2023.10070927","DOIUrl":null,"url":null,"abstract":"A high-performance 1200V 4H-SiC MOSFET platform has been successfully developed with the reliability certification of vehicle specification. In this paper, fabrication, electrical characterization, and reliability certification of 1200V 4H-SiC MOSFET are reported. By optimizing device structure and fabrication process, a low specific on-resistance (Rsp,on) of 3.3 mΩ*cm2 of 4H-SiC MOSFETs has been achieved on 1200V rated products, and very efficient 1200V/75mΩ 4H-SiC DMOSFETs were successfully fabricated. The highly reliable 1200V 4H-SiC MOSFET platform has been awarded the AEC-Q101 certificate by MOSFET reliability certification organization.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High performance 1200V SiC MOSFET platform with AEC-Q101 certificate\",\"authors\":\"Wenhua Shi, Qingchun Jon Zhang\",\"doi\":\"10.1109/SSLChinaIFWS57942.2023.10070927\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-performance 1200V 4H-SiC MOSFET platform has been successfully developed with the reliability certification of vehicle specification. In this paper, fabrication, electrical characterization, and reliability certification of 1200V 4H-SiC MOSFET are reported. By optimizing device structure and fabrication process, a low specific on-resistance (Rsp,on) of 3.3 mΩ*cm2 of 4H-SiC MOSFETs has been achieved on 1200V rated products, and very efficient 1200V/75mΩ 4H-SiC DMOSFETs were successfully fabricated. The highly reliable 1200V 4H-SiC MOSFET platform has been awarded the AEC-Q101 certificate by MOSFET reliability certification organization.\",\"PeriodicalId\":145298,\"journal\":{\"name\":\"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-02-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070927\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070927","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance 1200V SiC MOSFET platform with AEC-Q101 certificate
A high-performance 1200V 4H-SiC MOSFET platform has been successfully developed with the reliability certification of vehicle specification. In this paper, fabrication, electrical characterization, and reliability certification of 1200V 4H-SiC MOSFET are reported. By optimizing device structure and fabrication process, a low specific on-resistance (Rsp,on) of 3.3 mΩ*cm2 of 4H-SiC MOSFETs has been achieved on 1200V rated products, and very efficient 1200V/75mΩ 4H-SiC DMOSFETs were successfully fabricated. The highly reliable 1200V 4H-SiC MOSFET platform has been awarded the AEC-Q101 certificate by MOSFET reliability certification organization.
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