氮化镓基深紫外激光二极管孔阻挡层厚度优化

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI:10.1109/SSLChinaIFWS57942.2023.10071110

Mengshuang Yin, Aoxiang Zhang, Yuan Xu, Fang Wang, J. Liou, Yuhuai Liu

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引用次数: 0

摘要

本文通过优化空穴阻挡层(HBL)的厚度，减少n型区空穴泄漏，提高DUV-LD的工作性能。采用Crosslight软件对12nm、13nm、14nm和15nm厚度的HBLs进行仿真。通过分析四种结构的能带图、P-I特性和V-I特性，得出14nm厚HBL能有效减少空穴泄漏，具有更好的光电性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimization of thickness in hole blocking layer of AlGaN-based deep ultraviolet laser diodes

In this paper, the thickness of the hole blocking layer(HBL) is optimized to reduce the hole leakage in the n-type region and improve the operating performance of the DUV-LD. The simulation of 12nm, 13nm, 14nm and 15nm thick HBLs was carried out by Crosslight software. By analyzing the energy band diagrams, P-I characteristics and V-I characteristics of the four structures, it is concluded that the 14 nm thick HBL can effectively reduce the hole leakage and has better optoelectronic performance.

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来源期刊

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)

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