一种基于IPD技术的高增益P-L-S波段功率放大器

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI:10.1109/SSLChinaIFWS57942.2023.10071012

Ruoqi Yu, Yi Wang, Yansheng Hu, Jun Yin, J. Mo, Chuanbo Wang, Qiangdong Wang, Guoqing Yan, Tao Ni

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引用次数: 0

摘要

本文介绍了一种覆盖p波段到s波段的高增益氮化镓宽带功率放大器的设计过程。该放大器采用独特的集成无源器件技术(IPD)，体积小，不仅包含驱动级，还包含两个功率级，形成一个平衡的结构。整个放大器焊接在一个尺寸为27.3mm×30.6mm×5.0mm的封装中。测得的PA输出功率为25.2-36.4W, PAE为40.7-53.5%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A High Gain P-L-S Band Power Amplifier Based On IPD technology

This article describes the design procedure of a high gain Gallium Nitride broadband power amplifier which covers from P-band to S-band. Thanks to the unique integrated passive device technology（IPD）, the amplifier is realized in small size and contains not only the driver stage but also two power stage which forms a balanced structure. The whole amplifier is soldered in a package with the size of 27.3mm×30.6mm×5.0mm。The measured PA produces 25.2-36.4W of output power with the PAE of 40.7-53.5%.

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来源期刊

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)

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