A High Gain P-L-S Band Power Amplifier Based On IPD technology

Abstract

This article describes the design procedure of a high gain Gallium Nitride broadband power amplifier which covers from P-band to S-band. Thanks to the unique integrated passive device technology（IPD）, the amplifier is realized in small size and contains not only the driver stage but also two power stage which forms a balanced structure. The whole amplifier is soldered in a package with the size of 27.3mm×30.6mm×5.0mm。The measured PA produces 25.2-36.4W of output power with the PAE of 40.7-53.5%.