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2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)最新文献

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Reliability and Lifetime of a Novel 222-nm KrCl Excilamp 新型222nm KrCl Excilamp的可靠性和寿命
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070975
Fanny Zhao, Yapei Zeng, Hao Wu, Junquan Chen, Guoming Yang, Li Zhen, Brian Shieh, S. W. R. Lee
{"title":"Reliability and Lifetime of a Novel 222-nm KrCl Excilamp","authors":"Fanny Zhao, Yapei Zeng, Hao Wu, Junquan Chen, Guoming Yang, Li Zhen, Brian Shieh, S. W. R. Lee","doi":"10.1109/SSLChinaIFWS57942.2023.10070975","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070975","url":null,"abstract":"Recent studies in the epidermis have shown that Far-UVC (200-230nm) is a promising candidate against Novel Coronavirus (SARS-Cov-2) with little DNA damage. Due to the consideration that conventional Far-UVC KrCl excilamps may emit 200-230 nm radiation (typically 222-nm peak wavelength) but with some harmful UV radiation beyond 230 to 280 nm, a novel design of Far-UVC KrCl excilamps with the filter and reflector is introduced to reduce the harmful UV radiation from 10.9% to 2.5% at the cost of 30%~40% reduction in the total irradiance. In our study, the radiant characteristics and service life of the novel Far-UVC KrCl excilamps of 40~75 Watt (electrical power) with 222-nm peak wavelength were investigated. The service life was assessed under aging at the ambient temperatures (Ta) of 25 ℃ and 85 ℃ for 500 hours, respectively. The results showed that both the ambient temperature and the root mean square of current (Irms) into the excilamps have a substantial effect on the lifetime of the KrCl excilamps. Furthermore, although no significant change of the off-nominal emission ratio existed during the lifetime test, it was observed that the high ambient temperature has a negative effect on the filtering of the harmful radiation.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123983856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiphysics Simulation for Silicon Carbide Power Module Design Optimization 碳化硅功率模块设计优化的多物理场仿真
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071048
Lin Hu, Guo Xiaochuan, Pan Haijiang
{"title":"Multiphysics Simulation for Silicon Carbide Power Module Design Optimization","authors":"Lin Hu, Guo Xiaochuan, Pan Haijiang","doi":"10.1109/SSLChinaIFWS57942.2023.10071048","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071048","url":null,"abstract":"Electric-thermo-mechanical interaction has significant effect on the lifetime of a semiconductor power module. It is crucial to conduct collaborative simulations during the design phase to optimize the electrical and thermal performance of the power module and to minimize the thermomechanical stress from lifetime consideration. This study highlights the challenges of power module design in electronic, thermal, and mechanical co-simulation and presents a methodology in characterizing power module’s transient thermal response through transient CFD simulation and introduces a method of conducting mold flow analysis of power module by general CFD software. A concept for conducting multiphysics simulation is also proposed for power modules design using a single integrated general computer-aided engineering (CAE) software.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125318374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
4H-SiC Trench-gate MOSFET with JTE termination 带JTE终端的4H-SiC沟槽栅MOSFET
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071072
Zhengyun Zhu, Na Ren, Hongyi Xu, Li Liu, Kuang Sheng
{"title":"4H-SiC Trench-gate MOSFET with JTE termination","authors":"Zhengyun Zhu, Na Ren, Hongyi Xu, Li Liu, Kuang Sheng","doi":"10.1109/SSLChinaIFWS57942.2023.10071072","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071072","url":null,"abstract":"4H-SiC Trench-gate MOSFET with JTE terminationIn this paper, a 4H-SiC trench-gate MOSFET is reported with detailed introduction on cell design, fabrication and characterization. The proposed trench-gate MOSFET features an asymmetric cell structure, in which the channels are distributed along a-face (11-20). High energy Al ion implantation is utilized to form deep P+ shielding region, which alleviates the electric field crowding in the oxide layer at the bottom of gate trench. In terms of the termination, a JTE structure is designed and realized with single-step ICP etching. The proposed 4H-SiC trench-gate MOSFET is fabricated on a 4-inch epitaxial wafer with a 3-layer P/N/N-design. After electrode patterning, the devices are tested and characterized on wafer with B1505A. Based on the measurement results, analysis and discussion are presented.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116660472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A decrease in TDDB Lifetime of Commercial SiC power MOSFETs Under Repetitive Unclamped Inductive Switching Stresses 重复非箝位电感开关应力下商用SiC功率mosfet TDDB寿命的降低
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070979
Sheng Yang, Haonan Feng, Xuefeng Yu, Xinnan Lin
{"title":"A decrease in TDDB Lifetime of Commercial SiC power MOSFETs Under Repetitive Unclamped Inductive Switching Stresses","authors":"Sheng Yang, Haonan Feng, Xuefeng Yu, Xinnan Lin","doi":"10.1109/SSLChinaIFWS57942.2023.10070979","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070979","url":null,"abstract":"The degradation behavior under repetitive unclamped inductive switching stresses on the subsequent time-dependent dielectric breakdown (TDDB) of commercial SiC power MOSFETs are investigated. It is reported that repeated avalanche stresses can cause changes, including Vth (the threshold voltage) and Ron (on-state resistance) but not Igss (gate leakage current). However, the results show a significant decrease in the TDDB lifetime after 180k avalanche cycles, which suggests the degradation of the gate oxide. We attribute these results to defects at the SiC/SiO2 interface, which are caused by hot hole injection and trapping into the gate oxide above the channel and JFET region. The subthreshold curve analysis reveals that the density of the interface states changes during aging experiments, which further confirms our view. Meanwhile, interface states should be responsible for the increase in Ron, which was different from the previously research.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130805253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Large Field-of-view (FOV) Visible Laser Light Communication System Reaching 180° with Silicon Photomultiplier Receiver 采用硅光电倍增管接收机的180°大视场(FOV)可见激光通信系统
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071103
Chicheng Ma, Yuqi Hou, Lulu Zha, Shiji Lin, Haolin Jia, Chao Shen
{"title":"A Large Field-of-view (FOV) Visible Laser Light Communication System Reaching 180° with Silicon Photomultiplier Receiver","authors":"Chicheng Ma, Yuqi Hou, Lulu Zha, Shiji Lin, Haolin Jia, Chao Shen","doi":"10.1109/SSLChinaIFWS57942.2023.10071103","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071103","url":null,"abstract":"As a compelling part of the next-generation wireless communication technologies, visible light communication (VLC) enables the use of light bulbs as transmitters while addressing the shortage of spectrum resources. To achieve both lighting and communication applications, a large field of view (FoV) is desirable. Laser-based VLC technology has attracted increasing attention due to its high data rate but visible laser light communication (VLLC) system with a large FoV has yet been well studied. In this work, we design a VLLC system using a white laser transmitter and a silicon photomultiplier (SiPM) receiver with ultra-wide FoV reaching 180°. The preliminary experimental results show that the system enables transmission data rates over 500Mbps. This work suggests that the demonstrated VLLC system is promising for wide-coverage LiFi applications.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123051062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Junction temperature of 260 nm AlGaN UVC micro-LEDs under different irradiated Ta fluences 260nm AlGaN UVC微型led在不同辐照Ta影响下的结温
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071139
Zhuoqun Zhao, Xinyi Shan, Shijie Zhu, Zeyuan Qian, Xugao Cui, Shan Zhang, Wen Wang, P. Tian
{"title":"Junction temperature of 260 nm AlGaN UVC micro-LEDs under different irradiated Ta fluences","authors":"Zhuoqun Zhao, Xinyi Shan, Shijie Zhu, Zeyuan Qian, Xugao Cui, Shan Zhang, Wen Wang, P. Tian","doi":"10.1109/SSLChinaIFWS57942.2023.10071139","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071139","url":null,"abstract":"In this work, 260 nm UVC micro-LEDs with a size of 80 μm were fabricated and then were subject to two different fluences of heavy Ta ion irradiation. Junction temperatures of the fresh and irradiated micro-LEDs were tested by forward voltage method. At the ambient room temperature of 25.7℃, the fresh micro-LED and the irradiated micro-LEDs with fluences of 1×109 ions/cm2 and 5×109 ions/cm2 have junction temperatures of 53.4℃, 61.4℃ and 75.7℃ at a forward current of 25 mA, respectively. Degradation in I-V characteristics was observed with increasing the fluences of irradiation, thus generating higher junction temperature. The work helps to optimize thermal properties of UVC LEDs deployed in space scenarios.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130600502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent Research Progress on Colour Quality of Lighting 照明色彩质量的研究进展
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070988
Longfei Jia, Wei Chen, Yixuan Liu, Xueqing Deng, Qiang Liu
{"title":"Recent Research Progress on Colour Quality of Lighting","authors":"Longfei Jia, Wei Chen, Yixuan Liu, Xueqing Deng, Qiang Liu","doi":"10.1109/SSLChinaIFWS57942.2023.10070988","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070988","url":null,"abstract":"With the advancement of semiconductor lighting technology and the popularization of human-centred lighting concepts, colour preference and colour discrimination of lighting are now at the forefront of colour quality research of light source. However, individual case in psychophysical research have the inherent drawback of being inapplicable in multiple scenarios, and thus the two dimensions of colour quality of light source have not yet been effectively quantified. To address this issue, the team has successfully constructed the most accurate colour preference model MCPI, and the colour discrimination model CDM at this stage, based on a meta-analysis of multiple sets of psychophysical research data, which have also yielded convincing results in terms of visual mechanism. In addition, the CDM-E prediction model has been constructed by extending the CDM model with illumination factors.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132390969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Investigations on Short-Circuit Capability of a New Structure Planar SiC MOSFETs 一种新型结构平面SiC mosfet的短路性能实验研究
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070963
Chao-Wen Lin, Na Ren, Hongyi Xu, Zhengyun Zhu, Kuang Sheng
{"title":"Experimental Investigations on Short-Circuit Capability of a New Structure Planar SiC MOSFETs","authors":"Chao-Wen Lin, Na Ren, Hongyi Xu, Zhengyun Zhu, Kuang Sheng","doi":"10.1109/SSLChinaIFWS57942.2023.10070963","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070963","url":null,"abstract":"In this paper, a new structure named plasma spreading layer (PSL) is introduced into planar SiC MOSFETs to improve the short-circuit robustness. The short-circuit performance under 400V, 600V, and 800V bus voltage is tested. And two failure modes are discovered. The 3D TCAD simulations, Emission Microscope (EMMI), and Focused ion beam (FIB) are used to investigate the short-circuit failure mechanisms. Under 400V and 600V bus voltage, the interlayer dielectric between the source and the gate is damaged due to the high temperature generated in the short-circuit process, and the melted source metal Al is connected to the gate polysilicon, causing short circuit of the gate and source electrodes. Compared with commercial devices, the short-circuit capability of the device with PSL is improved by 3 to 7μs under 400V bus voltage. Under 800V bus voltage, the thermal power is almost twice that of 400V, which reduces the short circuit withstanding time (SCWT) of the device rapidly to just over 5µs. Due to such high instantaneous power, the device failure is characterized by the short circuit between the three electrodes, and thermal runaway is the cause of failure in this situation.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127781040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and performance tuning of luminescent materials for Micro LED 微型LED发光材料的设计与性能调整
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10071067
Yuhua Wang, Xicheng Wang, Deyin Wang, Tianrong Li, Takatoshi Seto
{"title":"Design and performance tuning of luminescent materials for Micro LED","authors":"Yuhua Wang, Xicheng Wang, Deyin Wang, Tianrong Li, Takatoshi Seto","doi":"10.1109/SSLChinaIFWS57942.2023.10071067","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10071067","url":null,"abstract":"Micro-LED is regarded as the next generation of display technology, and luminescence materials are one of the key materials to achieve full color, but there are still great challenges to developing efficient quantum dots and stable small-sized phosphors. In view of the key problems in quantum dots, such as poor stability, low quantum efficiency, and difficulty in balancing the small size and brightness of phosphor materials, this report will introduce the research progress in the realization of controllable material preparation and performance regulation.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126925488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LOW Inductance High Power IGBT Module 低电感高功率IGBT模块
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI: 10.1109/SSLChinaIFWS57942.2023.10070948
Lei Zhao, Yunpeng Jia, Xintian Zhou, Zhengjiang Wang
{"title":"LOW Inductance High Power IGBT Module","authors":"Lei Zhao, Yunpeng Jia, Xintian Zhou, Zhengjiang Wang","doi":"10.1109/SSLChinaIFWS57942.2023.10070948","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070948","url":null,"abstract":"As the core device of power electronic converter, IGBT power module is widely used in aerospace, high-speed rail, ship electric propulsion, new energy, electromagnetic launch, power transmission and other fields requiring energy exchange, which plays a vital role in the reliable operation of the system. However, the package structure of high-voltage IGBT modules will have parasitic inductance that cannot be ignored. Stray inductance will cause problems in various switching devices. It should be minimized early to avoid future redesign. Therefore, this paper starts from the analysis of half bridge IGBT module, uses Soildworks software to establish the IGBT high-voltage module model, uses ANSYS Simpler to import the chip parameters into the model schematic diagram, builds the schematic circuit, and simulates the impact of parasitic inductance at different positions in the circuit on circuit opening and closing. At the same time, the finite element software ANSYS is used to extract the parasitic inductance distribution of the module. In view of the problems such as overshoot voltage and electromagnetic interference caused by parasitic inductance during switching in practical applications, this paper proposes an improved method for half bridge IGBT module packaging, including the improvement of arc height of grid bonding wire and the optimization of local layout. The simulation results have certain reference significance for IGBT module design and electromagnetic compatibility. The improved structure will achieve significant effective power conversion and higher switching frequency.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115335999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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