LOW Inductance High Power IGBT Module

As the core device of power electronic converter, IGBT power module is widely used in aerospace, high-speed rail, ship electric propulsion, new energy, electromagnetic launch, power transmission and other fields requiring energy exchange, which plays a vital role in the reliable operation of the system. However, the package structure of high-voltage IGBT modules will have parasitic inductance that cannot be ignored. Stray inductance will cause problems in various switching devices. It should be minimized early to avoid future redesign. Therefore, this paper starts from the analysis of half bridge IGBT module, uses Soildworks software to establish the IGBT high-voltage module model, uses ANSYS Simpler to import the chip parameters into the model schematic diagram, builds the schematic circuit, and simulates the impact of parasitic inductance at different positions in the circuit on circuit opening and closing. At the same time, the finite element software ANSYS is used to extract the parasitic inductance distribution of the module. In view of the problems such as overshoot voltage and electromagnetic interference caused by parasitic inductance during switching in practical applications, this paper proposes an improved method for half bridge IGBT module packaging, including the improvement of arc height of grid bonding wire and the optimization of local layout. The simulation results have certain reference significance for IGBT module design and electromagnetic compatibility. The improved structure will achieve significant effective power conversion and higher switching frequency.