Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)最新文献_第3页

High current density nanofilament cathodes for microwave amplifiers 微波放大器用高电流密度纳米丝阴极

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1355014

J. Schnell, E. Minoux, L. Gangloff, P. Vincent, P. Legagneux, D. Dieurnegard, J. David, F. Peauger, L. Hudanski, K. Teo, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne, L. Vila, L. Dauginet-De Pra, S. Demoustier‐Champagne, E. Ferain, R. Legras, L. Piraux, O. Groening, H. De Raedt, K. Michielsen

{"title":"High current density nanofilament cathodes for microwave amplifiers","authors":"J. Schnell, E. Minoux, L. Gangloff, P. Vincent, P. Legagneux, D. Dieurnegard, J. David, F. Peauger, L. Hudanski, K. Teo, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne, L. Vila, L. Dauginet-De Pra, S. Demoustier‐Champagne, E. Ferain, R. Legras, L. Piraux, O. Groening, H. De Raedt, K. Michielsen","doi":"10.1109/IVNC.2004.1355014","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355014","url":null,"abstract":"We study high current density nanofilament cathodes for microwave amplifiers. Two different types of aligned nanofilament array have been studied: first, metallic nanowires grown by electrodeposition into nanoporous templates at very low temperature (T<100/spl deg/C) on a silicon wafer; second, carbon nanotubes/nanofibers (CNs) grown by catalytic plasma enhanced chemical vapour deposition. The fabrication process and the field emission properties of these two types of cathodes will be presented. Presently, the best results are obtained with CN cathodes. Arrays of 5.8 /spl mu/m height and 50 nm diameter CNs exhibit geometrical enhancement factor (h/r) of 240/spl plusmn/7.5%. Moreover, currents close to 100 /spl mu/A per emitter have been measured using a scanning anode field emission microscope. Due to these properties, 0.5 /spl times/ 0.5 mm/sup 2/ arrays emit a 2 mA current corresponding to 0.8 A/cm/sup 2/, in DC mode. The use of these cold cathodes in microwave triodes delivering 10 to 50 W at 30 GHz will be discussed for future telecommunication applications.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129684894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Synthesis and field emission properties of carbon nanosheets 碳纳米片的合成及其场发射性能

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354983

Jianjun Wang, M. Zhu, R. Outlaw, Xin Zhao, D. Manos, B. Holloway, V. Mammana, M. Ray, J. Dalton

引用次数: 0

Multilayer planar nanostructured SSE cathodes 多层平面纳米结构SSE阴极

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1355007

V. Semet, V. Binh, J.P. Zhang, J. Yang, M.A. Khan, R. Tsu

{"title":"Multilayer planar nanostructured SSE cathodes","authors":"V. Semet, V. Binh, J.P. Zhang, J. Yang, M.A. Khan, R. Tsu","doi":"10.1109/IVNC.2004.1355007","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355007","url":null,"abstract":"Multilayer planar nanostructured solid-state field-controlled emission (SSE) are studied. SSE is an approach to control the effective surface barrier for electron emission by monitoring the space charge value of an ultra-thin layer at the surface, or in other terms to lower the effective surface barrier by modifying the electronic properties of the underneath surface layer. A 0.15 /spl mu/m-thick Si-doped AlGaN layer with Al-content graded from 40% to 15% was deposited on a SiC substrate. It served as the conducting buffer layer. The finished surface was characterized to be atomically smooth by atomic force microscope. The I-V measurements were performed with a scanning anode field emission microscope (SAFEM). Two mechanisms were found to be present, first is tunneling field emission through a lowering work function. The electrons are emitted by a field emission mechanism from the quantized sub-bands inside the GaN quantum well, given a current density J/sub FN/. The second mechanism occurs for elevated temperatures, i.e. k/sub B/T > 0.8 eV, when hot electrons can jump over the first barrier located between the conductive substrate and the Al/sub 0.5/Ga/sub 0.5/N ultra-thin layer. As the second barrier at the surface is lower (less than 0.5 eV due to space charge) these electrons will emit directly. This first barrier controls the variation of the emitted current J/sub TH/ with temperature. In this dual-barrier model, the measured total emission current, J/sub mes/, will be the sum of both contributions, J/sub mes/ = J/sub FN/ + J/sub TH/.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131346252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear dielectric properties of Ba(Ti,Zr)O/sub 3/ thin films for tunable microwave device applications Ba(Ti,Zr)O/sub 3/薄膜的非线性介电特性

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354948

X. Tang, L. Chan

{"title":"Nonlinear dielectric properties of Ba(Ti,Zr)O/sub 3/ thin films for tunable microwave device applications","authors":"X. Tang, L. Chan","doi":"10.1109/IVNC.2004.1354948","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354948","url":null,"abstract":"Nano-structured barium zirconate titanate Ba(Ti/sub 1-x/Zr/sub x/)O/sub 3/ (BTZ, x=0.20, 0.25,0.30 and 0.35, abbreviated as BTZ20, BTZ25, BTZ30, and BTZ35, respectively) thin films on Pt/Ti/SiO/sub 2//Si(100) substrates have been prepared by pulse laser deposition (PLD) using a KrF Excimer Laser, lambda Physik Complex (/spl lambda/= 248 nm, 650 mJ, 25 ns). The targets are BTZ20, BTZ25, BTZ30 and BTZ35. The films were deposited at a laser repetition rate of 10 Hz and pulse laser energy of 300 mJ. The deposition rate was 20 nm/min. The oxygen pressure was an important factor and was kept 200 mTorr. Finally, the thin films were crystallized in situ at 650/spl deg/C in 400 mTorr of oxygen for 20 min and cooled down slowly to room temperature. The thin films were characterized using XRD and SEM. Dielectric measurements revealed that the thin films a relaxor behavior and have a diffuse phase transition when the Zr content of x increased from 0.20 to 0.35. The tunability decreased and figure of merit increased when the Zr content of x increased from 0.20 to 0.35, respectively for BTZ the thin films. Both of BTZ thin films with Zr content of 0.30 and 0.35 have low dielectric constant and high figure of merit. Therefore, the BTZ thin film is an attractive candidate for microwave tunable device applications.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129242607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth of gold nanowires by dielectrophoresis for field-emission display applications 用介质电泳法生长用于场发射显示的金纳米线

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1355010

D. Garner, N.Z. Mohd Zamin

引用次数: 0

Field emission of clean and oxidized Mo<110> microtips 清洁氧化Mo微针尖的场发射

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354916

X. Zhao, R. Outlaw, R. Champion, J.J. Wang, D. Manos, B. Holloway

引用次数: 0

Usefulness of nanocrystalline silicon ballistic emitter for operation in either low-vacuum or atmospheric pressure 在低真空或常压下工作的纳米晶硅弹道发射极的实用性

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354992

N. Koshida, A. Kojima, T. Ichihara, T. Komoda

引用次数: 0

Edge-shaped diamond field emission arrays 边形金刚石场发射阵列

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1116/1.1864061

R. Takalkar, J. Davidson, W. Kang, A. Wisitsora-at, D. Kerns

引用次数: 8

Screen printed carbon nanotube field emitter array for lighting source application 用于照明光源的丝网印刷碳纳米管场发射阵列

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1116/1.1851535

Jae-Hong Park, J. Moon, Jae-Hee Han, A. Berdinsky, J. Yoo, J. Nam, J. Park, C.G. Lee, D. Choi, Byeong Kyoo Shon, H. Chung, S. Kwon

引用次数: 37

Numerical analysis of carbon nanotube field emitter arrays with embedded electron beam focusing structure 嵌入式电子束聚焦结构碳纳米管场发射阵列的数值分析

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354912

Pi Jun, H. Uh, Byungkwan Kwak, Hyung Wook Noh, S. Park, Sungwook Ko, E. Cho, J. Lee

引用次数: 0