Edge-shaped diamond field emission arrays

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1116/1.1864061

R. Takalkar, J. Davidson, W. Kang, A. Wisitsora-at, D. Kerns

{"title":"Edge-shaped diamond field emission arrays","authors":"R. Takalkar, J. Davidson, W. Kang, A. Wisitsora-at, D. Kerns","doi":"10.1116/1.1864061","DOIUrl":null,"url":null,"abstract":"The fabrication and field emission behavior of micro-patterned polycrystalline edge-shaped diamond field emission arrays is reported. The edge-shaped diamond field emission arrays were fabricated on a silicon substrate utilizing conventional silicon patterning and etching techniques, and CVD diamond deposition via a mold transferring technique. The mold was filled with diamond using a PECVD process. The silicon was back etched to expose the diamond edges. Edge sharpening was achieved by introducing a silicon oxidation step in the mold fabrication process before the diamond deposition step. The oxide grown was /spl sim/3/spl mu/m thick. This oxidation process not only sharpened the edge but also served as a gate dielectric for the triode device. Each edge was 125/spl mu/m in length and 2/spl mu/m in width. The deposited diamond film was characterized using Raman spectroscopy. The fabricated diamond edge emitter arrays were tested in vacuum (10/sup -6/ Torr). A self-aligned gated edge emitter triode from a silicon-on-insulator (SOI) substrate was also fabricated.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/1.1864061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

Abstract

The fabrication and field emission behavior of micro-patterned polycrystalline edge-shaped diamond field emission arrays is reported. The edge-shaped diamond field emission arrays were fabricated on a silicon substrate utilizing conventional silicon patterning and etching techniques, and CVD diamond deposition via a mold transferring technique. The mold was filled with diamond using a PECVD process. The silicon was back etched to expose the diamond edges. Edge sharpening was achieved by introducing a silicon oxidation step in the mold fabrication process before the diamond deposition step. The oxide grown was /spl sim/3/spl mu/m thick. This oxidation process not only sharpened the edge but also served as a gate dielectric for the triode device. Each edge was 125/spl mu/m in length and 2/spl mu/m in width. The deposited diamond film was characterized using Raman spectroscopy. The fabricated diamond edge emitter arrays were tested in vacuum (10/sup -6/ Torr). A self-aligned gated edge emitter triode from a silicon-on-insulator (SOI) substrate was also fabricated.

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边形金刚石场发射阵列

报道了微图像化多晶边形金刚石场发射阵列的制备及其场发射性能。利用传统的硅图案化和蚀刻技术在硅衬底上制备了边缘形金刚石场发射阵列，并通过模具转移技术制备了CVD金刚石沉积。模具是用PECVD工艺填充金刚石。硅被反向蚀刻，露出钻石的边缘。在金刚石沉积步骤之前，通过在模具制造过程中引入硅氧化步骤来实现边缘锐化。所生长的氧化物厚度为/ sp1 μ m/3/ sp1 μ m/ m。这种氧化过程不仅使边缘锐化，而且还作为三极管器件的栅极电介质。每个边长125/亩/米，宽2/亩/米。利用拉曼光谱对沉积的金刚石膜进行了表征。在真空(10/sup -6/ Torr)条件下对制备的金刚石边缘发射极阵列进行了测试。在绝缘体上硅(SOI)衬底上制备了自对准门控边缘发射极三极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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