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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)最新文献

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AlN coatings on silicon field emitters and oxidised gates to enhance reliability for space applications 氮化铝涂层的硅场发射和氧化栅极，以提高可靠性的空间应用
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354949
L. Wang, K. Aplin, B. Kent, S. Huq, R. Stevens, G. Thomas, I. Loader, C. Collingwood, A. Malik, H. Blom
{"title":"AlN coatings on silicon field emitters and oxidised gates to enhance reliability for space applications","authors":"L. Wang, K. Aplin, B. Kent, S. Huq, R. Stevens, G. Thomas, I. Loader, C. Collingwood, A. Malik, H. Blom","doi":"10.1109/IVNC.2004.1354949","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354949","url":null,"abstract":"This paper describes the development of coatings for silicon field emission arrays used as an electron source to maintain spacecraft charge neutrality. The neutraliser specification includes 6 mA emission current at 0.2 W/mA and the instrument is required to operate for a lifetime of >6000 hours. To make the field emission device more resistant to ion bombardment and thermal failure, the effects of adding a layer of aluminium nitride (AlN), and thermal oxidation of the chromium gate electrode have been investigated. Different thicknesses of AlN film have been sputter coated onto the emitters under a variety of chamber pressure conditions. The thermally oxidised samples have been analysed by ESCA (Electron Spectroscopy for Chemical Analysis) and ERDA (Elastic Recoil Detection Analysis). For the oxidised chromium the composition is Cr = 0.31 and O = 0.69.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125889309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated CVD Ti中间层对微波加热CVD制备硅基碳纳米管的影响
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354885
C. Chuang, Y.‐S. Chen, J.H. Huang, Y. Wong, W. Kang
{"title":"Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated CVD","authors":"C. Chuang, Y.‐S. Chen, J.H. Huang, Y. Wong, W. Kang","doi":"10.1109/IVNC.2004.1354885","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354885","url":null,"abstract":"In the CVD growth of carbon nanotubes (CNTs) on Si, a thin Ti layer is usually deposited prior to the deposition of catalyst to enhance the adhesion of CNTs to Si. In this study, the effect of Ti layer on the growth of CNTs on Si using different catalysts (palladium, nickel, cobalt) by microwave-heated CVD was systematically studied. The details of microstructure characterization and field emission measurement, and the growth of aligned CNTs of emission quality will be presented.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125937307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Uniformity measurement of electron emission from carbon using electron beam resist 用电子束抗蚀剂测量碳的电子发射均匀性
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354896
J.H. Lee, S.H. Lee, W. Kim, H. Lee, J. Heo, T. Jeong, C. Choi, J.M. Kim
{"title":"Uniformity measurement of electron emission from carbon using electron beam resist","authors":"J.H. Lee, S.H. Lee, W. Kim, H. Lee, J. Heo, T. Jeong, C. Choi, J.M. Kim","doi":"10.1109/IVNC.2004.1354896","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354896","url":null,"abstract":"In this report, the direct measurement of the emission sites from practically working CNT emitters is presented using an electron resist (ER) coated anode substrate. It allows checking a detailed emission site distribution from randomly oriented CNT emitters without light spreading effect when using a phosphor screen. The estimation of emission uniformity is best performed by general image comparison containing many dots of the developed ER surface images.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123755332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Practical realisation of a field-emission-based magnetic sensor 场发射磁传感器的实际实现
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1355018
D. Garner, P. French
{"title":"Practical realisation of a field-emission-based magnetic sensor","authors":"D. Garner, P. French","doi":"10.1109/IVNC.2004.1355018","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355018","url":null,"abstract":"In this paper, the development of a functioning vacuum magnetic sensor (VMS), based upon the action of the Lorenz force on a field-emitted electron beam, is reported. The fabrication process is compatible with standard CMOS processes. It begins with the growth of a 2 /spl mu/m thick oxide on a silicon substrate followed by the deposition of a 300 nm thick polysilicon layer. LOCOS is used to pattern that polysilicon layer to form a field-emitting tip as the cathode, surrounding extraction gate electrodes, and a split anode placed at distances between 1 /spl mu/m and 500 /spl mu/m from the cathode and gate (over 100 device variations were fabricated using the same mask). It should be noted that the LOCOS step serves the dual purpose of defining the polysilicon electrodes and tip sharpening.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122338048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Smith-Purcell radiation using a single-tip field emitter 史密斯-珀塞尔辐射使用单尖端场发射器
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1116/1.1851536
Y. Neo, Y. Suzuki, K. Sagae, H. Shimawaki, H. Mimura
{"title":"Smith-Purcell radiation using a single-tip field emitter","authors":"Y. Neo, Y. Suzuki, K. Sagae, H. Shimawaki, H. Mimura","doi":"10.1116/1.1851536","DOIUrl":"https://doi.org/10.1116/1.1851536","url":null,"abstract":"Smith-Purcell radiation (SPR) was generated from a single-tip Si field emitter at a low power level. Single-tip Si field emitters were fabricated using reactive ion etching and thermal oxidation sharpening. Radiation measurements were performed through a viewing port in the visible spectra. SPR was successfully observed at 300-900 nm wavelength, 20-200 nA beam current and 25-30 kV accelerating voltage.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122513258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Field emission characteristics of BCN nanofilm BCN纳米膜的场发射特性
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354995
C. Kimura, H. Shima, K. Okada, S. Funakawa, T. Sugino
{"title":"Field emission characteristics of BCN nanofilm","authors":"C. Kimura, H. Shima, K. Okada, S. Funakawa, T. Sugino","doi":"10.1109/IVNC.2004.1354995","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354995","url":null,"abstract":"In this paper, addition of carbon (C) atoms into the hexagonal boron nitride (h-BN) film was found to solve cracking or peeling off the substrate. Boron carbon nitride (BCN) nanofilms with a thickness of /spl sim/8-10 nm were grown on n-Si(100) substrates by plasma assisted chemical vapor deposition (PACVD). Field emission characteristics were investigated for (BCN) nanofilms with various C compositions. No degradation of the field emission characteristics occurred for the BCN nanofilms with C compositions lower than 20%. On the other hand, the turn-on electric field increased with carbon composition for the BCN nanofilms with C compositions higher than 20%.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129855240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carbon nanotubes field emitter and back-gated structure 碳纳米管场发射极和背门控结构
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354917
M. Zhu, J.J. Wang, R. Outlaw, X. Zhao, B. Holloway, D. Manos, V. Mammana, M. Ray, O. Shenderova
{"title":"Carbon nanotubes field emitter and back-gated structure","authors":"M. Zhu, J.J. Wang, R. Outlaw, X. Zhao, B. Holloway, D. Manos, V. Mammana, M. Ray, O. Shenderova","doi":"10.1109/IVNC.2004.1354917","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354917","url":null,"abstract":"Carbon nanotubes (CNTs) were synthesized by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method on nanoscaled nickel particles as catalyst formed by both a nanosphere lithography (NSL) method and by a plasma pre-treatment of Ni layers on silicon substrates. These CNTs was studied as field emission materials using a novel triode structure for field emission device design by a back-gated structure. Field emission of this back-gated device was characterized using a triode I-V curve measurement.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116295012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Emission confinement on the (100) planes of etched tungsten field emitters coated with thin-film ZrC 镀有薄膜ZrC的蚀刻钨场致发射体(100)面发射约束
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354952
Tianbao Xie, W. Mackie, P. R. Davis
{"title":"Emission confinement on the (100) planes of etched tungsten field emitters coated with thin-film ZrC","authors":"Tianbao Xie, W. Mackie, P. R. Davis","doi":"10.1109/IVNC.2004.1354952","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354952","url":null,"abstract":"Field emission measurements were made on single crystal tungsten (100) emitters and were compared to emission measurements after coating with thin-film of zirconium carbide. The tungsten emitters were prepared using standard techniques. The emitter was then heated in steps with associated recording of emission data and images. The results showed a very marked emission confinement to the (100) crystallographic plane after coating with ZrC. The confined emission current was stabilized after falling to a lower lever. In a second set of experiments, (100) tungsten emitters were coated with NbC and ZrC in a separate deposition system and were placed in a 500 nm gate. The emitter were run at room temperature and at round 1800 K, emission confinement was again found on the (100) crystallographic plane. Emission stability was improved when the emitter was run at elevated temperatures. This research provided a method to obtain high current density field emission from a single tungsten tip coated with thin carbide film.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"38 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132692702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and field emission properties of nanostructured CuO emitters 纳米结构氧化铜发射体的制备及其场发射性能
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354933
C.Y. Li, J.X. Huang, J. Chen, S. Deng, N. Xu
{"title":"Preparation and field emission properties of nanostructured CuO emitters","authors":"C.Y. Li, J.X. Huang, J. Chen, S. Deng, N. Xu","doi":"10.1109/IVNC.2004.1354933","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354933","url":null,"abstract":"Field emission properties of semiconductor nanostructured CuO films synthesized by both solid-liquid and solid-gas reaction methods under different conditions have been studied and compared. The morphology and structure of the prepared nanostructures CuO films were characterized using scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. Stable field emission at low field from CuO nanostructures has been obtained. The result indicates that nanostructured CuO could be a promising cold cathode material.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116289752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of an advanced HEED (High Efficiency Electron-emission Device) 一种先进的高效电子发射器件的表征
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1355017
N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, N. Koshida
{"title":"Characterization of an advanced HEED (High Efficiency Electron-emission Device)","authors":"N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, N. Koshida","doi":"10.1109/IVNC.2004.1355017","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355017","url":null,"abstract":"We recently developed a new-type cold cathode termed HEED (High-Efficiency Electron-emission Device) based on the Metal-Insulator-Semiconductor (MIS) diode. It has been shown that by arranging the device and surface structures the emission characteristics can be significantly improved. Using the advanced HEED as an excitation source, a 4-inch prototype flat panel display has been fabricated on a glass substrate. The panel operates well with a practical brightness at a relatively low driving voltage. The occasional reactivation technique is very effective to prolong the operation life of this device.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123922415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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