Ti中间层对微波加热CVD制备硅基碳纳米管的影响

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354885

C. Chuang, Y.‐S. Chen, J.H. Huang, Y. Wong, W. Kang

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引用次数: 0

摘要

在硅上CVD生长碳纳米管(CNTs)时，通常在催化剂沉积之前先沉积一层薄薄的Ti层，以增强碳纳米管与Si的粘附性。本研究系统研究了不同催化剂(钯、镍、钴)在微波加热CVD下，Ti层对Si上CNTs生长的影响。详细介绍了微观结构表征和场发射测量，以及具有发射质量的排列CNTs的生长。

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Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated CVD

In the CVD growth of carbon nanotubes (CNTs) on Si, a thin Ti layer is usually deposited prior to the deposition of catalyst to enhance the adhesion of CNTs to Si. In this study, the effect of Ti layer on the growth of CNTs on Si using different catalysts (palladium, nickel, cobalt) by microwave-heated CVD was systematically studied. The details of microstructure characterization and field emission measurement, and the growth of aligned CNTs of emission quality will be presented.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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