Emission confinement on the (100) planes of etched tungsten field emitters coated with thin-film ZrC

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354952

Tianbao Xie, W. Mackie, P. R. Davis

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Abstract

Field emission measurements were made on single crystal tungsten (100) emitters and were compared to emission measurements after coating with thin-film of zirconium carbide. The tungsten emitters were prepared using standard techniques. The emitter was then heated in steps with associated recording of emission data and images. The results showed a very marked emission confinement to the (100) crystallographic plane after coating with ZrC. The confined emission current was stabilized after falling to a lower lever. In a second set of experiments, (100) tungsten emitters were coated with NbC and ZrC in a separate deposition system and were placed in a 500 nm gate. The emitter were run at room temperature and at round 1800 K, emission confinement was again found on the (100) crystallographic plane. Emission stability was improved when the emitter was run at elevated temperatures. This research provided a method to obtain high current density field emission from a single tungsten tip coated with thin carbide film.

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镀有薄膜ZrC的蚀刻钨场致发射体(100)面发射约束

对单晶钨(100)发射体进行了场发射测量，并与碳化锆薄膜涂层后的场发射测量结果进行了比较。采用标准工艺制备钨源。然后将发射器逐步加热，并记录相关的发射数据和图像。结果表明，ZrC涂层对(100)晶面有明显的发射约束。受限发射电流降至较低水平后稳定。在第二组实验中，在一个单独的沉积系统中涂覆了NbC和ZrC，并放置在500 nm栅极中。发射体在室温下运行，在1800k左右，在(100)晶体平面上再次发现了发射约束。在高温下工作，提高了发射稳定性。本研究提供了一种在单钨尖上涂覆薄碳化物薄膜获得高电流密度场发射的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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