BCN纳米膜的场发射特性

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354995

C. Kimura, H. Shima, K. Okada, S. Funakawa, T. Sugino

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引用次数: 0

摘要

在本文中，发现在六方氮化硼(h-BN)薄膜中加入碳(C)原子可以解决基体开裂或剥落的问题。采用等离子体辅助化学气相沉积(PACVD)技术在n-Si(100)衬底上生长了厚度为/spl sim/8 ~ 10 nm的硼碳氮(BCN)纳米膜。研究了不同碳组成的(BCN)纳米膜的场发射特性。当碳含量低于20%时，BCN纳米膜的场发射特性没有发生退化。另一方面，当碳含量大于20%时，BCN纳米膜的导通电场随碳含量的增加而增加。

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Field emission characteristics of BCN nanofilm

In this paper, addition of carbon (C) atoms into the hexagonal boron nitride (h-BN) film was found to solve cracking or peeling off the substrate. Boron carbon nitride (BCN) nanofilms with a thickness of /spl sim/8-10 nm were grown on n-Si(100) substrates by plasma assisted chemical vapor deposition (PACVD). Field emission characteristics were investigated for (BCN) nanofilms with various C compositions. No degradation of the field emission characteristics occurred for the BCN nanofilms with C compositions lower than 20%. On the other hand, the turn-on electric field increased with carbon composition for the BCN nanofilms with C compositions higher than 20%.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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