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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)最新文献

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A novel light emitting device based on Si nanostructures and tunneling injection of carriers 一种基于硅纳米结构和载流子隧穿注入的新型发光器件
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354950
H. Wong, V. Filip, P. Chu
{"title":"A novel light emitting device based on Si nanostructures and tunneling injection of carriers","authors":"H. Wong, V. Filip, P. Chu","doi":"10.1109/IVNC.2004.1354950","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354950","url":null,"abstract":"Silicon was not used for light emitting devices (LEDs) as it is an indirect bandgap material and has very low radiative recombination rate and short photon lifetime. This fundamental material property limitation has been overcome. Recent efforts have demonstrated that the light emitting efficiency can be enhanced greatly and lasing effect is also possible with the low-dimensional (LD) silicon materials. In this work, a novel light- emitting device structure based on Si/SiO/sub 2//LD Si/Si/sub 3/N/sub 4//Si system is proposed. The low-dimensional Si governed the photon generation efficiency and energy spectrum whereas the asymmetry barrier heights formed by the SiO/sub 2/ and Si/sub 3/N/sub 4/ provide high efficiency carrier injection based on direct tunneling and maximizes the recombination events taking place in the LD Si region. Quantum calculations on the charge transports, including the direct tunneling carrier injection at the Si/SiO/sub 2/ interface and band-to-band recombination of in the LD Si, were conducted.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130046990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Characterization of nano-size YVO/sub 4/:Eu and (Y,Gd)VO/sub 4/:Eu phosphor via low voltage cathodoluminescence 纳米YVO/sub 4/:Eu和(Y,Gd)VO/sub 4/:Eu荧光粉的低压阴极发光表征
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354930
J. Kang, M. Nazarov, Jin Young Kim, D. Jeon
{"title":"Characterization of nano-size YVO/sub 4/:Eu and (Y,Gd)VO/sub 4/:Eu phosphor via low voltage cathodoluminescence","authors":"J. Kang, M. Nazarov, Jin Young Kim, D. Jeon","doi":"10.1109/IVNC.2004.1354930","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354930","url":null,"abstract":"Low voltage cathodoluminescence (LVCL) measurements were carried out to better understand the role of Gd in (Y,Gd)VO/sub 4/:Eu phosphor and to compare solid-state reaction (SSR) with coprecipitation method (PM) to synthesize those phosphors. From the analysis of LVCL measurement, it is believed that there is no interaction between Gd and Eu, and Gd affects only the symmetry of Eu site. It is also found that nano-size YVO/sub 4/:Eu phosphor synthesized by PM shows low quantum yield in comparison with that synthesized by SSR.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116162827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electric field induced alignment of carbon nanotubes grown by CVD CVD法生长碳纳米管的电场诱导排列
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1355000
A. Obraztsov, A. Zolotukhin, A. Volkov, V.V. Rodaatis, A. Chakhovskoi
{"title":"Electric field induced alignment of carbon nanotubes grown by CVD","authors":"A. Obraztsov, A. Zolotukhin, A. Volkov, V.V. Rodaatis, A. Chakhovskoi","doi":"10.1109/IVNC.2004.1355000","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355000","url":null,"abstract":"In this report, results of the experiments devoted to developing of the method for controllable growth of CNT aligned in different directions were presented. For this purpose the usual setup for CVD was modified to provide shielding of the substrate from electric field existing between the cathode and the anode when the high voltage is applied to activate dc discharge. A mesh mask is used as the electrostatic shield. Similar to the standard CVD process, generation of C/sub 2/ species occurs in the plasma, and then these species are deposited on the substrate surface via the holes in the mask. With appropriate conditions, CNT growth was obtained on various substrates (Ni plate, quartz substrate patterned with Ni thin film stripes). An application of bias voltage between the Ni stripes allows for the partial alignment of CNT along the direction of the electric field between the stripes. This result confirms a possibility to achieve controllable growth of the CNTs.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122404708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pressure dependence and current stability of field emission from carbon nanotubes on porous alumina 多孔氧化铝上碳纳米管场发射的压力依赖性和电流稳定性
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354967
D. Lysenkov, G. Muller, J. Engstler, J. J. Schneider
{"title":"Pressure dependence and current stability of field emission from carbon nanotubes on porous alumina","authors":"D. Lysenkov, G. Muller, J. Engstler, J. J. Schneider","doi":"10.1109/IVNC.2004.1354967","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354967","url":null,"abstract":"Carbon nanotubes are synthesized by CVD using source precursors of metallocene related structures both on commercial and home made electrochemically etched porous alumina membranes of different thickness (60-200 /spl mu/m) and pore diameter (50-200 nm). AFM, SEM, EDX and TEM investigations showed that the tubular structures formed within the pores of the alumina membranes are composed of pyrolytic carbon in which nanoscaled metallic particles are incorporated. Long-term processing effects in the pressure range resulted in both irreversible degradation and reversible activation of some emitters.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127239117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study on some parameters of affecting field emission characteristics of carbon nanotubes films 影响碳纳米管薄膜场发射特性的几个参数研究
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354902
Liu Xinghui, Zhu Changchun
{"title":"Study on some parameters of affecting field emission characteristics of carbon nanotubes films","authors":"Liu Xinghui, Zhu Changchun","doi":"10.1109/IVNC.2004.1354902","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354902","url":null,"abstract":"To further disclose the emission mechanism and improve emission characteristics of carbon nanotubes (CNT) array films, some parameters affecting field emission characteristics were studied. The field-enhancement factor on the CNT's tip as a function of the CNT's radius r, height L, along with the inter-tube distance was simulated by self-developed CNTFENS2 software in terms of Laplace equation. The results of numerical simulation indicated that the height and radius of the CNT could affect the field emission of the CNT film. Another finding was that the inter-tube distance thus number density of CNT on the substrate could affect the field-enhancement greatly due to the screening effect of nearby CNT.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132642716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature burnable CNT paste component for CNT-field emitter backlight unit 低温可燃碳纳米管粘贴组件，用于碳纳米管场发射器背光装置
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354931
Sora Lee, D. Jeon
{"title":"Low temperature burnable CNT paste component for CNT-field emitter backlight unit","authors":"Sora Lee, D. Jeon","doi":"10.1109/IVNC.2004.1354931","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354931","url":null,"abstract":"New component of CNT paste is explored to develop a carbon nanotube field emitter backlight unit (CNT-FE BLU) by screen printing method. To reduce the remnant of organic binder materials on the surface of SWCNT, P(MMA-co-BMA) random block copolymer as the new binder materials is developed. The weight of the remnant materials after burning process at 350/spl deg/C was measured by TGA. The measured field emission property demonstrated that the developed P(MMA-co-BMA) was effective to reduce the remnant on surface of CNT, which is critically important for improving the field emission property of CNT-FE BLU fabricated by screen printing method.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122986161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Robust and regenerable integrally gated carbon nanotube field emitter arrays 鲁棒可再生集成门控碳纳米管场发射阵列
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354981
D. Hsu, J. Shaw
{"title":"Robust and regenerable integrally gated carbon nanotube field emitter arrays","authors":"D. Hsu, J. Shaw","doi":"10.1109/IVNC.2004.1354981","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354981","url":null,"abstract":"Multiwalled carbon nanotubes (cNTs) in both the gated cNT-on-Si post and the cNT-in-open configurations were used in this study. Large increases in field emission current were observed when operating cNTs in substantial pressures of hydrogen, especially after the nanotubes have been contaminated with oxygen. Emission degradation was likely due to surface contamination with oxygen and was removed by reaction with hydrogen (atoms). Exposure of the emitters to molecular hydrogen or oxygen when the arrays are not emitting has no effect on the emission produced once the gases are removed, suggesting that the nanotubes are inert to the molecular forms of hydrogen and oxygen and that the atomic forms, which are created by electron dissociation, react with surface groups. The requirement for relatively high pressures of hydrogen also suggests that atomic hydrogen was responsible for the large enhancement and regeneration effects. The ability to regenerate emission from contaminated cNT can prolong emitter device lifetimes and save cost.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123961348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Emission characteristics of printed CNT cathodes after laser treatment 激光处理后碳纳米管阴极的发射特性
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354998
A. Hosono, T. Shiroishi, F. Abe, Z. Shen, S. Nakata, S. Okuda
{"title":"Emission characteristics of printed CNT cathodes after laser treatment","authors":"A. Hosono, T. Shiroishi, F. Abe, Z. Shen, S. Nakata, S. Okuda","doi":"10.1109/IVNC.2004.1354998","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354998","url":null,"abstract":"The printed carbon nanotubes (CNTs) on the substrate were stood erect by the laser treatment and they worked as emission sites. The emission characteristics was improved drastically by the laser treatment up to the turn-on voltage 2 V//spl mu/m and the current density 4 mA/cm/sup 2/, approximately. A certain level of height of CNT (approximately 3 /spl mu/m) is necessary to lower the turn-on voltage and reduce emission variation effectively.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"15 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127667443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Triode emitters with well-structure cathode 结构良好的阴极三极管发射体
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1109/IVNC.2004.1354881
Sungil Bae, K. Park, Soonil Lee, K. Koh
{"title":"Triode emitters with well-structure cathode","authors":"Sungil Bae, K. Park, Soonil Lee, K. Koh","doi":"10.1109/IVNC.2004.1354881","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354881","url":null,"abstract":"The suppression of gate current was realized by introducing an extra conducting layer between gate-insulators and cathode layers. A new type of triode emitters were fabricated, in which carbon emitter layers were positioned at the central part of the well bottom formed in silicon well structures. The silicon well structure was formed using reactive ion etching (RIE). Because of the favorable field distribution using heavily doped /spl eta/-type silicon, we were able to suppress the gate current almost completely.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129334029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observation of electron emission pattern from nano-split emitter fabricated using beam assisted process 束辅助工艺制备纳米分裂发射极的电子发射模式观察
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI: 10.1116/1.1875372
K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai
{"title":"Observation of electron emission pattern from nano-split emitter fabricated using beam assisted process","authors":"K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai","doi":"10.1116/1.1875372","DOIUrl":"https://doi.org/10.1116/1.1875372","url":null,"abstract":"The possibility of interference of electrons from a nano-split emitter fabricated using beam assisted processes has been investigated. With the gap size of 16 nm, the emission pattern with two spots was observed at a gate voltage close to the turn-on voltage. At the higher gate voltages, two spots become overlapped but no interference fringes were observed at room temperature.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128450271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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