纳米YVO/sub 4/:Eu和(Y,Gd)VO/sub 4/:Eu荧光粉的低压阴极发光表征

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354930

J. Kang, M. Nazarov, Jin Young Kim, D. Jeon

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引用次数: 0

摘要

为了更好地了解Gd在(Y,Gd)VO/sub 4/:Eu荧光粉中的作用，并比较固态反应(SSR)和共沉淀法(PM)合成这些荧光粉的方法，我们进行了低压阴极发光(LVCL)测量。从LVCL测量分析，认为Gd与Eu之间不存在相互作用，Gd仅影响Eu位的对称性。与SSR合成相比，PM合成的纳米YVO/sub 4/:Eu荧光粉的量子产率较低。

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Characterization of nano-size YVO/sub 4/:Eu and (Y,Gd)VO/sub 4/:Eu phosphor via low voltage cathodoluminescence

Low voltage cathodoluminescence (LVCL) measurements were carried out to better understand the role of Gd in (Y,Gd)VO/sub 4/:Eu phosphor and to compare solid-state reaction (SSR) with coprecipitation method (PM) to synthesize those phosphors. From the analysis of LVCL measurement, it is believed that there is no interaction between Gd and Eu, and Gd affects only the symmetry of Eu site. It is also found that nano-size YVO/sub 4/:Eu phosphor synthesized by PM shows low quantum yield in comparison with that synthesized by SSR.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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