发布求助
文献互助 智能选刊 最新文献

2006 IEEE International Conference on Semiconductor Electronics最新文献

筛选
英文 中文
A 10GHz Reconfigurable UWB LNA in 130nm CMOS 一种基于130nm CMOS的10GHz可重构超宽带LNA
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380736
P. Amiri, H. Gharaee, A. Nabavi
{"title":"A 10GHz Reconfigurable UWB LNA in 130nm CMOS","authors":"P. Amiri, H. Gharaee, A. Nabavi","doi":"10.1109/SMELEC.2006.380736","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380736","url":null,"abstract":"A 10 GHz reconfigurable CMOS LNA for UWB receiver is presented. The LNA is fabricated with the 0.13 mum standard CMOS process. Measurement of the chip is performed on a ADS simulator. In the UWB low-band (3 to 5.15 GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P1dB of -17 dBm, respectively. In the band from 2.4 to 3 G Hz (covering a 802.11 b/g band), the LNA exhibit a gain of 17.5- 18 dB and noise figure less than 3.5 dB. From 5.2 to 6 GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8 V.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124833078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Plane-view Transmission Electron Microscopy for Advanced Integrated Circuit 先进集成电路平面透射电镜
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380709
Pan-pan Liu, K. Li, E. Eddie, Siping Zhao
{"title":"Plane-view Transmission Electron Microscopy for Advanced Integrated Circuit","authors":"Pan-pan Liu, K. Li, E. Eddie, Siping Zhao","doi":"10.1109/SMELEC.2006.380709","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380709","url":null,"abstract":"In this paper, the authors try to introduce three techniques for plane-view TEM sample preparation. First, traditional plane-view TEM sample preparation will be introduced. The second technique is FIB- based lift-out method, which places the sample on the carbon film. This technique is used to cut isolated defects, such as SRAM single bit failure, but this technique introduces artifacts from FIB ion damage and carbon film. The last technique is a combination of tripod polishing, FIB milling and ion milling. Specific cases will be given to illustrate the application of these techniques.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129386327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Numerical Analysis of Filamentation in Conventional Double Heterostructure and Quantum Well High-Power Broad-Area Laser Diodes 传统双异质结构量子阱大功率广域激光二极管灯丝的数值分析
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380793
A. Seyedfaraji, V. Ahmadi, M. Noshiravani, F. Gity
{"title":"Numerical Analysis of Filamentation in Conventional Double Heterostructure and Quantum Well High-Power Broad-Area Laser Diodes","authors":"A. Seyedfaraji, V. Ahmadi, M. Noshiravani, F. Gity","doi":"10.1109/SMELEC.2006.380793","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380793","url":null,"abstract":"A comprehensive model is presented to study filamentation in both conventional double heterostructure (DH) and quantum well (QW) semiconductor lasers. The spatial dynamics of broad-area (BA) semiconductor lasers is studied by numerically solving space-dependent coupled partial differential equations for the complex optical fields and the carrier density distribution. A self-consistent iteration is developed to model the formation and longitudinal propagation of unstable transverse optical filamentary structures by means of beam propagation method. The effects of stripe width, linewidth enhancement factor and Kerr coefficient are analyzed.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132092071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Studies on A New Sela-FIB Sample Preparation Method and Its Application in Failure Analysis of Wafer Fabrication for 110nm Technology Node and Beyond Sela-FIB样品制备新方法及其在110纳米及以上工艺节点晶圆制造失效分析中的应用研究
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380784
Z. Siping, H. Younan, E. Eddie, Khoo Ley Hong
{"title":"Studies on A New Sela-FIB Sample Preparation Method and Its Application in Failure Analysis of Wafer Fabrication for 110nm Technology Node and Beyond","authors":"Z. Siping, H. Younan, E. Eddie, Khoo Ley Hong","doi":"10.1109/SMELEC.2006.380784","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380784","url":null,"abstract":"In this paper, a novel sample preparation method for obtaining high- resolution SEM profile is proposed. Both Sela fine cleave and FIB slice techniques have been used for SEM sample preparation. Using this new method, high-resolution 90 degrees SEM micrographs are provided. It has been applied in failure analysis to check Via gouging information without any charging problem, which helps us to reduce TEM analysis samples.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121581986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Low-Cost CMOS Reconfigurable Receiver for WiMAX Applications 用于WiMAX应用的低成本CMOS可重构接收器
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381079
Adiseno, G. Wiranto, T.M.S. Soegandi
{"title":"A Low-Cost CMOS Reconfigurable Receiver for WiMAX Applications","authors":"Adiseno, G. Wiranto, T.M.S. Soegandi","doi":"10.1109/SMELEC.2006.381079","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381079","url":null,"abstract":"This paper presents a low cost solution for lower frequency WiMAX CPE receivers. A receiver which consists of wideband LNA, switching mixer, VCO and reconfigurable low-pass filter have been designed and simulated in different WiMAX receive bands such as in the 2.3-GHz band, in the ISM band (2.4-GHz), and in the 2.5-GHz band, as well as in different channel bandwidths, ranging from 1.75 MHz up to 10 MHz. The zero-IF architecture is chosen as it suits for receivers using OFDM signals with null DC subcarrier. The LNA and switching mixer have been fabricated in 0.18 mum RF- CMOS technology and the measurement results show that these building blocks have a combined RF-to-IF gain of 20-dB, a DSB noise figure of 3.5-dB, an RF-to-IF IIP2 and IIP3 higher than +20-dBm and 0-dBm, respectively. The circuit consumes 16-mA from 1.8-V supply and occupies a die area of 0.42 times 0.50 mm2. Simulation results of the negative-Gm VCO show that it can oscillate at the desired frequencies with phase-noise performance of better than - 125-dBc/Hz at a frequency offset of 3.5 MHz. A reconfigurable 4th order of Gm-C low-pass filter (LPF) has been designed using two 2nd order biquad gm- C LPFs and its simulation results show that - 3-dB frequency corners can be adjusted to 1.75-MHz, 3.5-MHz, 7-MHz and 14-MHz. Both VCO and LPF are simulated using 0.18 mum RF-CMOS technology.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114180779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Efficiency and Spectral Characteristics of 850 nm Oxide-Confined Vertical-Cavity Surface-Emitting Lasers 850 nm氧化受限垂直腔面发射激光器的效率和光谱特性
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381054
M. Alias, P. Leisher, K. Choquette, K. Anuar, D. Siriani, S. Mitani, Y. Mohd Razman, A.M. Abdul Fatah
{"title":"Efficiency and Spectral Characteristics of 850 nm Oxide-Confined Vertical-Cavity Surface-Emitting Lasers","authors":"M. Alias, P. Leisher, K. Choquette, K. Anuar, D. Siriani, S. Mitani, Y. Mohd Razman, A.M. Abdul Fatah","doi":"10.1109/SMELEC.2006.381054","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381054","url":null,"abstract":"In this work, a number of 850 nm vertical-cavity surface-emitting lasers (VCSELs) with varying oxide aperture sizes are fabricated and characterized to study the device efficiency and spectral characteristics. Differential quantum efficiencies up to 28% corresponding to wall-plug efficiencies of 15%, and multi-mode output spectrum rang of 845 nm to 850 nm were measured for a number of these devices. Additionally, the efficiency characteristics and spectral as a function of oxide aperture size for these 850 nm VCSELs are analyzed and explained.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120973527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of the Vacuum Spark as an EUV Source for Next Generation Lithography 真空火花作为下一代光刻的EUV源的发展
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381096
Chew Soo Hoon, W. San
{"title":"Development of the Vacuum Spark as an EUV Source for Next Generation Lithography","authors":"Chew Soo Hoon, W. San","doi":"10.1109/SMELEC.2006.381096","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381096","url":null,"abstract":"Extreme ultraviolet lithography (EUVL) which requires a radiation in a 2% wavelength band around 13.5 nm is expected to be the next generation lithography (NGL) system. A 13.5 nm EUV source is needed to satisfy the demand for the production of semiconductor chips with critical dimensions of 50 nm and below. Nowadays, plasma based EUV sources such as laser produced plasmas and gas discharges are considered internationally by many as the practical light sources. Recently, much progress has been made in vacuum spark discharges as they seem to offer an alternative with much higher conversion efficiency into EUV photons. The vacuum spark (UMVS-III) being a compact pulsed plasma discharge has been investigated in this laboratory as a possible EUV source. An extension of the earlier research work on X-ray production by the vacuum spark to the EUV region is carried out.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121170708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Weak point and improvement of CMOS Schmitt Trigger Circuit used in Microcontroller about ND-mode ESD 单片机用CMOS施密特触发电路对nd模式ESD的弱点及改进
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380693
Jae-Seong Jeong, Jung-Min Lee, Sang-Deuk Park
{"title":"Weak point and improvement of CMOS Schmitt Trigger Circuit used in Microcontroller about ND-mode ESD","authors":"Jae-Seong Jeong, Jung-Min Lee, Sang-Deuk Park","doi":"10.1109/SMELEC.2006.380693","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380693","url":null,"abstract":"In this study, We investigated weak point and improvement about ND-mode ESD of CMOS Schmitt trigger circuit embeded in Microcontroller. Junction spiking conditions on NMOS of the CMOS Schmitt trigger circuit were Vcc Common mode, ND-mode 1.4 kV, and 0.8-1.2 sec zap interval (pin to pin). Failure mechanism by LNPN action formed in CMOS Schmitt trigger circuit was reproduced. We have identified Root Cause and improved circuits to achieve ESD damage free.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125232441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical-Based SPICE Model of CMOS STI y-Stress Effect 基于物理的CMOS应力效应SPICE模型
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380737
P. Tan, A. Kordesch, O. Sidek
{"title":"Physical-Based SPICE Model of CMOS STI y-Stress Effect","authors":"P. Tan, A. Kordesch, O. Sidek","doi":"10.1109/SMELEC.2006.380737","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380737","url":null,"abstract":"In this paper, we proposed a new physical-based equation to model the CMOS transistor STI y-stress (in the direction of channel width). It can be used in any SPICE MOS model and it has been verified on 0.13 um CMOS transistors. The physical characteristics of the compressive STI y-stress effect on saturation drain current, Idsat are captured by using a new proposed transistor layout method. The equation that is able to describe the physical characteristics of the STI y-stress effect is incorporated into the electron and hole mobility, uO of the SPICE model to capture the y-stress effect on Idsat. With the combination of the new y-stress parameters and the default delta width parameters in the SPICE model, we are able to fit the simulation curve to the hook shaped Idsat curve from the actual silicon data.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122724576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Fabrication of Platinum Membrane on Silicon for MEMS Microphone MEMS传声器用硅基铂膜的制备
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381010
A. A. Hamzah, B. Y. Majlis, I. Ahmad
{"title":"Fabrication of Platinum Membrane on Silicon for MEMS Microphone","authors":"A. A. Hamzah, B. Y. Majlis, I. Ahmad","doi":"10.1109/SMELEC.2006.381010","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381010","url":null,"abstract":"Platinum membrane with silicon nitride layer is fabricated and analyzed. The membrane, which is designed for MEMS microphone application, is fabricated using sputter platinum and CVD silicon nitride. Membranes with sandwich layer of platinum-nitride-platinum with thickness of 6.35 mum are successfully fabricated. Deflection of the fabricated membrane corresponding to given pressure is measured using Tencor surface profiler. It is observed that deflection at its center is proportional to applied pressure for pressure between 20 Pa to 200 Pa. Average center deflection for applied pressure of 200 Pa is measured to be 0.41 mum. The fabricated platinum membrane is deemed suitable for MEMS microphone application due to its linear deflection response in acoustic pressure range.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122729193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信