850 nm氧化受限垂直腔面发射激光器的效率和光谱特性

M. Alias, P. Leisher, K. Choquette, K. Anuar, D. Siriani, S. Mitani, Y. Mohd Razman, A.M. Abdul Fatah
{"title":"850 nm氧化受限垂直腔面发射激光器的效率和光谱特性","authors":"M. Alias, P. Leisher, K. Choquette, K. Anuar, D. Siriani, S. Mitani, Y. Mohd Razman, A.M. Abdul Fatah","doi":"10.1109/SMELEC.2006.381054","DOIUrl":null,"url":null,"abstract":"In this work, a number of 850 nm vertical-cavity surface-emitting lasers (VCSELs) with varying oxide aperture sizes are fabricated and characterized to study the device efficiency and spectral characteristics. Differential quantum efficiencies up to 28% corresponding to wall-plug efficiencies of 15%, and multi-mode output spectrum rang of 845 nm to 850 nm were measured for a number of these devices. Additionally, the efficiency characteristics and spectral as a function of oxide aperture size for these 850 nm VCSELs are analyzed and explained.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"119 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Efficiency and Spectral Characteristics of 850 nm Oxide-Confined Vertical-Cavity Surface-Emitting Lasers\",\"authors\":\"M. Alias, P. Leisher, K. Choquette, K. Anuar, D. Siriani, S. Mitani, Y. Mohd Razman, A.M. Abdul Fatah\",\"doi\":\"10.1109/SMELEC.2006.381054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a number of 850 nm vertical-cavity surface-emitting lasers (VCSELs) with varying oxide aperture sizes are fabricated and characterized to study the device efficiency and spectral characteristics. Differential quantum efficiencies up to 28% corresponding to wall-plug efficiencies of 15%, and multi-mode output spectrum rang of 845 nm to 850 nm were measured for a number of these devices. Additionally, the efficiency characteristics and spectral as a function of oxide aperture size for these 850 nm VCSELs are analyzed and explained.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"119 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.381054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.381054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在本工作中,制作了一些850 nm不同氧化物孔径的垂直腔面发射激光器(VCSELs),并对其进行了表征,研究了器件效率和光谱特性。这些器件的差分量子效率高达28%,对应于15%的壁插效率,多模输出光谱范围为845 nm至850 nm。此外,分析和解释了850 nm vcsel的效率特性和光谱随氧化物孔径大小的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficiency and Spectral Characteristics of 850 nm Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
In this work, a number of 850 nm vertical-cavity surface-emitting lasers (VCSELs) with varying oxide aperture sizes are fabricated and characterized to study the device efficiency and spectral characteristics. Differential quantum efficiencies up to 28% corresponding to wall-plug efficiencies of 15%, and multi-mode output spectrum rang of 845 nm to 850 nm were measured for a number of these devices. Additionally, the efficiency characteristics and spectral as a function of oxide aperture size for these 850 nm VCSELs are analyzed and explained.
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