Studies on A New Sela-FIB Sample Preparation Method and Its Application in Failure Analysis of Wafer Fabrication for 110nm Technology Node and Beyond

Z. Siping, H. Younan, E. Eddie, Khoo Ley Hong
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引用次数: 2

Abstract

In this paper, a novel sample preparation method for obtaining high- resolution SEM profile is proposed. Both Sela fine cleave and FIB slice techniques have been used for SEM sample preparation. Using this new method, high-resolution 90 degrees SEM micrographs are provided. It has been applied in failure analysis to check Via gouging information without any charging problem, which helps us to reduce TEM analysis samples.
Sela-FIB样品制备新方法及其在110纳米及以上工艺节点晶圆制造失效分析中的应用研究
本文提出了一种获得高分辨率扫描电镜剖面的新型样品制备方法。Sela精细切割和FIB切片技术都被用于SEM样品的制备。利用这种新方法,提供了高分辨率的90度扫描电镜显微图像。已应用于故障分析中,检查Via刨削信息,没有任何充电问题,帮助我们减少TEM分析样品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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