先进集成电路平面透射电镜

Pan-pan Liu, K. Li, E. Eddie, Siping Zhao
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引用次数: 2

摘要

本文介绍了三种平面透射电镜样品制备技术。首先,介绍了传统的平面透射电镜样品制备方法。第二种技术是基于FIB的提出法,它将样品放在碳膜上。该技术用于切割孤立的缺陷,如SRAM单比特故障,但该技术引入了FIB离子损伤和碳膜的伪影。最后一种技术是三脚架抛光、FIB铣削和离子铣削的结合。将给出具体的案例来说明这些技术的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Plane-view Transmission Electron Microscopy for Advanced Integrated Circuit
In this paper, the authors try to introduce three techniques for plane-view TEM sample preparation. First, traditional plane-view TEM sample preparation will be introduced. The second technique is FIB- based lift-out method, which places the sample on the carbon film. This technique is used to cut isolated defects, such as SRAM single bit failure, but this technique introduces artifacts from FIB ion damage and carbon film. The last technique is a combination of tripod polishing, FIB milling and ion milling. Specific cases will be given to illustrate the application of these techniques.
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