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Diffusion and population dynamics of excitons in c-axis grown ZnO quantum wells c轴生长ZnO量子阱中激子的扩散和居群动力学
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472359
C. Hall, G. Richards, J. Tollerud, H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. Yano, J. Davis
{"title":"Diffusion and population dynamics of excitons in c-axis grown ZnO quantum wells","authors":"C. Hall, G. Richards, J. Tollerud, H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. Yano, J. Davis","doi":"10.1109/COMMAD.2012.6472359","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472359","url":null,"abstract":"In this work a transient grating experiment was used to explore the inplane transport properties and two-colour pump-probe and time resolved photolu-minescence experiments were used to explore the population dynamics of excitons in ZnO quantum wells. By implementing stepped barriers in such quantum wells we also show that the overlap of the electron and hole wavefunctions can be controlled.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131099942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene (TESADT) organic transistors? 热退火是三乙基硅乙基反辐射噻吩(TESADT)有机晶体管结晶的可行替代方法吗?
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472426
R. Lyttleton, K. Muhieddine, J. Anthony, A. Micolich
{"title":"Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene (TESADT) organic transistors?","authors":"R. Lyttleton, K. Muhieddine, J. Anthony, A. Micolich","doi":"10.1109/COMMAD.2012.6472426","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472426","url":null,"abstract":"Solvent annealing is a wellknown method for crystallization of the TESADT semiconductor film in organic transistors. We show that although thermal annealing is also effective in producing crystallization, it compromises the resulting electrical performance.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134211921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature transport on surface conducting diamond 表面导电金刚石的低温输运
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472376
M. Edmonds, L. H. Willems van Beveren, K. Ganesan, N. Eikenberg, J. Červenka, S. Prawer, L. Ley, A. Hamilton, C. Pakes
{"title":"Low temperature transport on surface conducting diamond","authors":"M. Edmonds, L. H. Willems van Beveren, K. Ganesan, N. Eikenberg, J. Červenka, S. Prawer, L. Ley, A. Hamilton, C. Pakes","doi":"10.1109/COMMAD.2012.6472376","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472376","url":null,"abstract":"Magneto-transport measurements were performed on surface conducting hydrogen-terminated diamond (100) hall bars at temperatures between 0.1-5.0 K in magnetic fields up to 8T.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131459532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vanadium Dioxide based tunable plasmonic antennas 二氧化钒基可调谐等离子体天线
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472386
T. James, S. Earl, J. Valentine, T. Davis, J. McCallum, R. Haglund, A. Roberts
{"title":"Vanadium Dioxide based tunable plasmonic antennas","authors":"T. James, S. Earl, J. Valentine, T. Davis, J. McCallum, R. Haglund, A. Roberts","doi":"10.1109/COMMAD.2012.6472386","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472386","url":null,"abstract":"Here we report on the integration of metallic nanorods with the phase-change material Vanadium Dioxide (VO2). The change in its optical constants that accompanies the VO2 phase transition permits the modulation of the resonant frequencies of these dipoles. This technique will underpin the development of dynamically tunable optical antennas.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132943338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantification of the zinc dopant concentration in GaAs nanowires 砷化镓纳米线中锌掺杂物浓度的定量测定
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472350
T. Burgess, S. Du, B. Gault, Q. Gao, H. Tan, R. Zheng, C. Jagadish
{"title":"Quantification of the zinc dopant concentration in GaAs nanowires","authors":"T. Burgess, S. Du, B. Gault, Q. Gao, H. Tan, R. Zheng, C. Jagadish","doi":"10.1109/COMMAD.2012.6472350","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472350","url":null,"abstract":"The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders of magnitude increase in nanowire conductivity.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122669708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RF magnetron sputtered molybdenum back contact for Cu2ZnSnS4 thin film solar cells Cu2ZnSnS4薄膜太阳能电池的射频磁控溅射钼背触点
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472360
X. Liu, X. Hao, M. Green, S. Huang, G. Conibeer
{"title":"RF magnetron sputtered molybdenum back contact for Cu2ZnSnS4 thin film solar cells","authors":"X. Liu, X. Hao, M. Green, S. Huang, G. Conibeer","doi":"10.1109/COMMAD.2012.6472360","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472360","url":null,"abstract":"Molybdenum thin films were RF sputtered on soda lime glasses as back contacts for Cu2ZnSnS4 solar cells. In this work, the pressure and substrate temperature effect on structural, electrical, adhesion and surface morphology are investigated. About 500 nm thick thin films deposited at low argon pressure and high substrate temperature exhibit low resistivity of 11.4 μΩ cm. Films deposited at high argon pressure and low substrate temperature show high resistivity and good adhesion to glass substrates. Films deposited at low argon pressure and high substrate temperature exhibit low resistivity but suffer from poor adhesion. Smooth surface and low resistivity were obtained at low argon pressure.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116444396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical characterisation of spin-coated a-IZO thin-film transistors 自旋涂覆a-IZO薄膜晶体管的电学特性
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472434
L. Deam, K. K. Lee, J. McCallum, B. Singh
{"title":"Electrical characterisation of spin-coated a-IZO thin-film transistors","authors":"L. Deam, K. K. Lee, J. McCallum, B. Singh","doi":"10.1109/COMMAD.2012.6472434","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472434","url":null,"abstract":"Electrical measurements have been performed on amorphous metal oxide spin-coated thin-film transistors. The conducting layer is amorphous indium zinc oxide (a-IZO) which has been processed at low temperatures. We are looking to improve material and device properties, in particular carrier mobility, using electrical characterisation techniques such as deep-level transient spectroscopy (DLTS) and Hall measurements.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127795318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation for effective XRD profile factors for high piezo-electric property 高压电性能的有效XRD剖面因素研究
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472375
K. Tsuchiya, Y. Nakada, Y. Uetsuji
{"title":"Investigation for effective XRD profile factors for high piezo-electric property","authors":"K. Tsuchiya, Y. Nakada, Y. Uetsuji","doi":"10.1109/COMMAD.2012.6472375","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472375","url":null,"abstract":"In this paper, the effective XRD profile factors for the improvement of piezoelectric characteristic especially for BaTiO3 well known as unleaded piezoelectric material were specified by analysis software RIETAN-2000, under the conditions based on literature review by other research groups such as the improvement of piezoelectric property due to the increase of the crystallite size, the decrease of lattice strain for the piezoelectric material, and the decrease of half value width for X-ray diffraction pattern improving the crystalline. As a result, it was clear that a decrease in the isotropic lattice strain was effective to show high piezoelectricity.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"139 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128867886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magneto-transport study on the two dimensional electron gas in ZnMgO/ZnO heterostructure grown by MOVPE MOVPE生长ZnMgO/ZnO异质结构中二维电子气的磁输运研究
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472430
J. Ye, S. T. Lim, S. Gu, H. Tan, C. Jagadish, K. Teo
{"title":"Magneto-transport study on the two dimensional electron gas in ZnMgO/ZnO heterostructure grown by MOVPE","authors":"J. Ye, S. T. Lim, S. Gu, H. Tan, C. Jagadish, K. Teo","doi":"10.1109/COMMAD.2012.6472430","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472430","url":null,"abstract":"Magneto-transport studies on ZnMgO/ZnO heterostructures grown by MOVPE technique have been performed. The features of spin-polarization of 2DEG and intrinsic ferromagnetism of heterostructure were observed at 1.5 K and the related physical mechanisms are discussed.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129924626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion-implantation and analysis for doped silicon slot waveguides 掺杂硅槽波导的离子注入与分析
COMMAD 2012 Pub Date : 2012-10-01 DOI: 10.1109/COMMAD.2012.6472368
L. Deam, N. Stavrias, K. K. Lee, J. McCallum
{"title":"Ion-implantation and analysis for doped silicon slot waveguides","authors":"L. Deam, N. Stavrias, K. K. Lee, J. McCallum","doi":"10.1109/COMMAD.2012.6472368","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472368","url":null,"abstract":"Ion implantation is being used to fabricate silicon-nanocrystal (Si-nc) erbium-doped slot waveguide structures. Photoluminescence (PL) measurements are used to investigate the luminescent and erbium sensitisation properties while Rutherford backscattering spectrometry (RBS) is used to provide structural information. This study is a preliminary step toward development of active elements for silicon optical interconnects.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130514428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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