掺杂硅槽波导的离子注入与分析

COMMAD 2012 Pub Date : 2012-10-01 DOI:10.1109/COMMAD.2012.6472368

L. Deam, N. Stavrias, K. K. Lee, J. McCallum

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引用次数: 0

摘要

离子注入被用于制造硅纳米晶掺铒槽波导结构。光致发光(PL)测量用于研究发光和铒致敏特性，而卢瑟福后向散射光谱(RBS)用于提供结构信息。本研究为开发硅光互连用有源元件迈出了初步的一步。

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Ion-implantation and analysis for doped silicon slot waveguides

Ion implantation is being used to fabricate silicon-nanocrystal (Si-nc) erbium-doped slot waveguide structures. Photoluminescence (PL) measurements are used to investigate the luminescent and erbium sensitisation properties while Rutherford backscattering spectrometry (RBS) is used to provide structural information. This study is a preliminary step toward development of active elements for silicon optical interconnects.

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COMMAD 2012

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