发布求助
文献互助 智能选刊 最新文献

COMMAD 2012最新文献

筛选
英文 中文
Quantum integrated photonics on GaAs GaAs上的量子集成光子学
COMMAD 2012 Pub Date : 2013-11-07 DOI: 10.1109/IPCON.2013.6656393
S. Hofling, M. Lermer, J. Beetz, T. Hoang, J. P. Sprengers, A. Gaggero, D. Sahin, L. Midolo, M. Skacel, L. Balet, P. Jiang, S. Jahanmirinejad, G. Frucci, N. Chauvin, F. Mattioli, R. Sanjinés, R. Leoni, E. Engin, M. Thompson, J. O'Brien, A. Fiore, M. Kamp
{"title":"Quantum integrated photonics on GaAs","authors":"S. Hofling, M. Lermer, J. Beetz, T. Hoang, J. P. Sprengers, A. Gaggero, D. Sahin, L. Midolo, M. Skacel, L. Balet, P. Jiang, S. Jahanmirinejad, G. Frucci, N. Chauvin, F. Mattioli, R. Sanjinés, R. Leoni, E. Engin, M. Thompson, J. O'Brien, A. Fiore, M. Kamp","doi":"10.1109/IPCON.2013.6656393","DOIUrl":"https://doi.org/10.1109/IPCON.2013.6656393","url":null,"abstract":"Progress towards the development of a quantum integrated photonics platform on GaAs will be reported, including on-chip single photon sources, detectors, splitters, couplers and modulators.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131112104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications 光电子应用中无应变GaAs/AlGaAs量子分子的液滴外延
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472356
W. Lei, P. Parkinson, H. Tan, C. Jagadish
{"title":"Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications","authors":"W. Lei, P. Parkinson, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472356","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472356","url":null,"abstract":"This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125909333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Light trapping and solar energy harvesting in thin film photonic crystals 薄膜光子晶体中的光捕获和太阳能收集
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1117/12.2061129
S. John
{"title":"Light trapping and solar energy harvesting in thin film photonic crystals","authors":"S. John","doi":"10.1117/12.2061129","DOIUrl":"https://doi.org/10.1117/12.2061129","url":null,"abstract":"Photonic crystals are widely known for their light-trapping capabilities. This is often associated with the occurrence of a photonic band gap or other suppression in the electromagnetic density of states [1-3]. This also enables unprecedented forms of strong coupling between light and matter. A less studied form of light-trapping occurs in the higher bands of a photonic crystal, where the electromagnetic density of states is enhanced rather than suppressed. This enables strong absorption of light from a broadband source over a wide acceptance angle in a material with weak intrinsic absorption [4].","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122343869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resistive switching in high-k dielectrics for non-volatile memory applications 非易失性存储器用高k介电体的电阻开关
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472390
R. Elliman, M. Saleh, D. Venkatachalam, T. Kim, K. Belay, F. Karouta
{"title":"Resistive switching in high-k dielectrics for non-volatile memory applications","authors":"R. Elliman, M. Saleh, D. Venkatachalam, T. Kim, K. Belay, F. Karouta","doi":"10.1109/COMMAD.2012.6472390","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472390","url":null,"abstract":"We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122628597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of single photon centres in silicon carbide 碳化硅中单光子中心的制备
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472438
B. C. Johnson, S. Castelletto, T. Ohshima, T. Umeda
{"title":"Fabrication of single photon centres in silicon carbide","authors":"B. C. Johnson, S. Castelletto, T. Ohshima, T. Umeda","doi":"10.1109/COMMAD.2012.6472438","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472438","url":null,"abstract":"Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC) is reported. The photo-physical properties of the defect, having emission around 700 nm is presented.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129009101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A metamaterial antenna approach to near infra-red polarisation state control 近红外偏振状态控制的超材料天线方法
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472361
J. Cadusch, T. James, T. Davis, A. Roberts
{"title":"A metamaterial antenna approach to near infra-red polarisation state control","authors":"J. Cadusch, T. James, T. Davis, A. Roberts","doi":"10.1109/COMMAD.2012.6472361","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472361","url":null,"abstract":"We report on a plasmonic metamaterial approach to controlling the polarisation state of visible and near infra-red (NIR) light.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114212144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of plasmonic nanoparticles on the quantum efficiency of III–V semiconductor nanowire emitters 等离子体纳米粒子对III-V型半导体纳米线发射体量子效率的影响
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472353
S. Mokkapati, D. Saxena, Q. Gao, H. Tan, C. Jagadish
{"title":"Effect of plasmonic nanoparticles on the quantum efficiency of III–V semiconductor nanowire emitters","authors":"S. Mokkapati, D. Saxena, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472353","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472353","url":null,"abstract":"We study the possibility of increasing the quantum efficiency of III-V semiconductor nanowire emitters using plasmonics. Results on the effect of plasmonic nanoparticle size, emitter-plasmonic nanoparticle distance and the initial quantum efficiency of the emitter on the quantum efficiency enhancement factor are presented.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114823578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing 选择性区域量子阱混合的单片集成多段半导体激光器
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472398
P. Sajewicz, L. Fu, H. Tan, K. Vora, C. Jagadish
{"title":"Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing","authors":"P. Sajewicz, L. Fu, H. Tan, K. Vora, C. Jagadish","doi":"10.1109/COMMAD.2012.6472398","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472398","url":null,"abstract":"In this work, we report the use of dielectric capping layer of TiO2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ~ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127977081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical switching and photoluminescence in erbium implanted vanadium dioxide thin films 掺铒二氧化钒薄膜的光开关和光致发光
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1557/OPL.2013.544
H. Lim, J. McCallum, N. Stavrias, R. Marvel, R. Haglund
{"title":"Optical switching and photoluminescence in erbium implanted vanadium dioxide thin films","authors":"H. Lim, J. McCallum, N. Stavrias, R. Marvel, R. Haglund","doi":"10.1557/OPL.2013.544","DOIUrl":"https://doi.org/10.1557/OPL.2013.544","url":null,"abstract":"Vanadium dioxide (VO2) undergoes an insulator-metal transition (IMT) that involves drastic changes in its electrical and optical properties at relatively low critical temperature Tc ≈ 67°C [1]. The switching speed when triggered by an optical impulse is incredibly fast, within a femtosecond timescale [2]. Erbium (Er3+) with a stimulated emission at the standard telecommunication wave-length of 1535nm has been used extensively in fiber-optic communication systems [3]. The combination of VO2 and Er3+ could make an ultrafast optical switch that is capable of simultaneous signal amplification. In this work, we investigated the possibilities of making such a device, both theoretically and experimentally. Our experimental methods involve temperature-driven optical switching tests and photoluminescence (PL) spectroscopy on Er3+ implanted VO2 thin films. The observations of the IMT of VO2 and the PL of Er3+ in the thin films would be vital in determining whether the VO2:Er system would work as an optical switch and amplifier. A range of implantation and post-annealing schemes were explored in an attempt to find the optimal processing conditions that would maximize the qualities of the optical switching and PL.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"30 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131539290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Low-band gap nanoparticles embedded in high-K dielectrics 嵌入高k介电体中的低带隙纳米颗粒
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472391
T. Nestler, S. Haas, R. Otto, F. Schneider, S. Hickey, S. Gabriel, C. Himcinschi, V. Klemm, G. Schreiber, J. Heitmann
{"title":"Low-band gap nanoparticles embedded in high-K dielectrics","authors":"T. Nestler, S. Haas, R. Otto, F. Schneider, S. Hickey, S. Gabriel, C. Himcinschi, V. Klemm, G. Schreiber, J. Heitmann","doi":"10.1109/COMMAD.2012.6472391","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472391","url":null,"abstract":"In this paper our recent research on Ge and PbS nanoparticles embedded in ZrO<sub>2</sub> will be reviewed. Ge nanoparticles have been deposited by rf-cosputtering of ZrGe<sub>2</sub>O<sub>2.9</sub>/ZrO<sub>2</sub> superlattices and subsequent annealing. ZrO<sub>2</sub> and the phase separated Ge crystallizes at 650°C into nanocrystalline layers. These layers show a luminescence signal at 2.5 eV, which is contributed to defect luminescence. PbS nanoparticles have been fabricated using wet chemical methods and embedded in the ZrO<sub>2</sub> matrix by sol-gel deposition. In this case a luminescence signal at 1.3 μm has been detected after annealing at 100°C.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130701528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信