R. Elliman, M. Saleh, D. Venkatachalam, T. Kim, K. Belay, F. Karouta
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Resistive switching in high-k dielectrics for non-volatile memory applications
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.
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