Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

Abstract

In this work, we report the use of dielectric capping layer of TiO2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ~ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.