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Design and analysis of a metasurface for supporting spoof surface plasmon polaritons 支持欺骗表面等离子激元极化的超表面设计与分析
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472409
C. Shah, W. Withayachumnankul, S. Hanham, S. Maier, W. Rowe, M. Bhaskaran, S. Sriram, A. Mitchell
{"title":"Design and analysis of a metasurface for supporting spoof surface plasmon polaritons","authors":"C. Shah, W. Withayachumnankul, S. Hanham, S. Maier, W. Rowe, M. Bhaskaran, S. Sriram, A. Mitchell","doi":"10.1109/COMMAD.2012.6472409","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472409","url":null,"abstract":"A chain of complementary split ring resonators (CSRRs) operating at terahertz frequencies have the potential to sustain surface plasmon polaritons (SPPs). As a first step, the transmission spectra of a 2D periodic array of scaled CSRRs operating at terahertz frequencies were obtained. A second investigation, explored the effect of a polydimethylsiloxane (PDMS) substrate on the resonance of CSRRs. These simulations confirm the strong resonance of the CSRRs and their potential for supporting SPPs.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130722837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Mesh substrate for gravitational magnetoelastic metamaterial 重力磁弹性超材料的网状衬底
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472384
I. Khodasevych, G. Kostovski, W. Rowe, A. Mitchell
{"title":"Mesh substrate for gravitational magnetoelastic metamaterial","authors":"I. Khodasevych, G. Kostovski, W. Rowe, A. Mitchell","doi":"10.1109/COMMAD.2012.6472384","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472384","url":null,"abstract":"In this paper we present a microfabricated mesh substrate for use in gravitational magnetoelastic metamaterials. The high resolution technique allows the manipulation of the electromagnetic properties of the substrate towards free space-like performance. This is achieved via removal of predetermined substrate areas while simultaneously shaping the required mechanical features.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115636247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of growth temperature and V/III ratio on Au-assisted InxGa1−xAs nanowires 生长温度和V/III比对au辅助InxGa1−xAs纳米线的影响
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472348
A. Ameruddin, H. Tan, H. Fonseka, Q. Gao, J. Wong-Leung, P. Parkinson, S. Breuer, C. Jagadish
{"title":"Influence of growth temperature and V/III ratio on Au-assisted InxGa1−xAs nanowires","authors":"A. Ameruddin, H. Tan, H. Fonseka, Q. Gao, J. Wong-Leung, P. Parkinson, S. Breuer, C. Jagadish","doi":"10.1109/COMMAD.2012.6472348","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472348","url":null,"abstract":"InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114962855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spintronics for instant-on nonvolatile electronics 用于瞬时非易失性电子器件的自旋电子学
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472388
K. Wang, P. Amiri
{"title":"Spintronics for instant-on nonvolatile electronics","authors":"K. Wang, P. Amiri","doi":"10.1109/COMMAD.2012.6472388","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472388","url":null,"abstract":"Using collective spins or nanomagnets offers the possibility of constructing high speed nonvolatile electronics, resulting in the energy dissipation at the device level possibly approaching the fundamental equilibrium Maxwell-Shannon-Landaur limit. This paper will describe the progress in energy-efficient MgO-based magnetic tunnel junction (MTJ) bits for high-speed spin-transfer-torque magnetoresistive random access memory (STT-MRAM). Furthermore, the possibility of a Magnetoelectric RAM (MeRAM) as a promising candidate for ultralow power is discussed. Demonstrated principles and experiments of voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric field offer much reduced switching energy at high speed. The latter may enable a new paradigm of high speed nonvolatile electronics.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117167565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An optically resonant, grating-based technique for the sensitive detection of MEMS cantilever beam height 基于光学谐振光栅的MEMS悬臂梁高度敏感检测技术
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472387
G. Putrino, M. Martyniuk, A. Keating, L. Faraone, J. Dell
{"title":"An optically resonant, grating-based technique for the sensitive detection of MEMS cantilever beam height","authors":"G. Putrino, M. Martyniuk, A. Keating, L. Faraone, J. Dell","doi":"10.1109/COMMAD.2012.6472387","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472387","url":null,"abstract":"We present an experimental demonstration of an integrated technique designed to measure the height position of a micro-cantilever with extremely high precision. Our experimental results show that changing the beam height by 200 nm can result in an up to 40 dB change in optical power transmitted through an underlying optical waveguide.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125676433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced electrochemical heavy metal ion sensor using liquid metal marbles - towards on-chip application 基于液态金属弹珠的增强型电化学重金属离子传感器——面向片上应用
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472436
V. Sivan, S. Tang, A. O’Mullane, P. Petersen, N. Eshtiaghi, K. Kalantar-zadeh, A. Mitchell
{"title":"Enhanced electrochemical heavy metal ion sensor using liquid metal marbles - towards on-chip application","authors":"V. Sivan, S. Tang, A. O’Mullane, P. Petersen, N. Eshtiaghi, K. Kalantar-zadeh, A. Mitchell","doi":"10.1109/COMMAD.2012.6472436","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472436","url":null,"abstract":"This paper reports on a highly sensitive electrochemical based heavy metal ion sensor obtained by using recently discovered liquid metal marbles. We present the procedure to form these liquid metal marbles with controlled coating density. We also show enhanced electrochemical sensitivity of these marbles towards heavy metal ions with excellent selectivity.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125355123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor 用奈米电晶体电荷感测单铒中心的光离光谱
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472428
C. Yin, Miloš Rančić, N. Stavrias, G. D. Boo, J. McCallum, M. Sellars, S. Rogge
{"title":"Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor","authors":"C. Yin, Miloš Rančić, N. Stavrias, G. D. Boo, J. McCallum, M. Sellars, S. Rogge","doi":"10.1109/COMMAD.2012.6472428","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472428","url":null,"abstract":"We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114156053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimisation studies for AlGaN/GaN-based nitrate sensors 基于AlGaN/ gan的硝酸盐传感器优化研究
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472411
F. L. Khir, M. Myers, A. Podolska, M. Baker, B. Nener, G. Parish
{"title":"Optimisation studies for AlGaN/GaN-based nitrate sensors","authors":"F. L. Khir, M. Myers, A. Podolska, M. Baker, B. Nener, G. Parish","doi":"10.1109/COMMAD.2012.6472411","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472411","url":null,"abstract":"AlGaN/GaN HEMT (high electron mobility transistor) sensors have been coated with a nitrate selective polymer membrane enabling nitrate ion sensing in water. In this study we optimise the thickness of the nitrate selective membrane to maximise sensor performance (sensitivity).","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121164067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertical transport in InAs/GaSb type-II superlattices InAs/GaSb ii型超晶格中的垂直输运
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472332
G. Umana-Membreno, B. Klein, H. Kala, J. Antoszewski, G. Gautam, M. N. Kutty, E. Plis, S. Krishna, L. Faraone
{"title":"Vertical transport in InAs/GaSb type-II superlattices","authors":"G. Umana-Membreno, B. Klein, H. Kala, J. Antoszewski, G. Gautam, M. N. Kutty, E. Plis, S. Krishna, L. Faraone","doi":"10.1109/COMMAD.2012.6472332","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472332","url":null,"abstract":"In this work, we report on the measurement of vertical transport parameters in p-doped InAs/GaSb type-II superlattices for long-wavelength infrared detectors. Since the Hall effect technique cannot be used for vertical transport measurements, a magnetoresistance approach has been used. The magnetore-sistance data was obtained at electric fields not exceeding 25 V/cm and magnetic fields up to 12T. It is shown that at room temperature the sample conductivity is due to four distinct carriers, associated with the majority carrier holes, side-wall inversion layer electrons, and two minority carrier electrons likely associated with two distinct conduction band levels.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125623107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improvement of minority carrier lifetime in GaAs/AlxGa1−xAs core-shell nanowires GaAs/AlxGa1−xAs核壳纳米线中少数载流子寿命的改善
COMMAD 2012 Pub Date : 2012-12-01 DOI: 10.1109/COMMAD.2012.6472346
N. Jiang, P. Parkinson, Q. Gao, J. Wong-Leung, S. Breuer, H. Tan, C. Jagadish
{"title":"Improvement of minority carrier lifetime in GaAs/AlxGa1−xAs core-shell nanowires","authors":"N. Jiang, P. Parkinson, Q. Gao, J. Wong-Leung, S. Breuer, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472346","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472346","url":null,"abstract":"GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with AlxGa1-xAs shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124918427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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