A. Ameruddin, H. Tan, H. Fonseka, Q. Gao, J. Wong-Leung, P. Parkinson, S. Breuer, C. Jagadish
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Influence of growth temperature and V/III ratio on Au-assisted InxGa1−xAs nanowires
InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.
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