选择性区域量子阱混合的单片集成多段半导体激光器

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472398

P. Sajewicz, L. Fu, H. Tan, K. Vora, C. Jagadish

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引用次数: 0

摘要

在这项工作中，我们报道了使用TiO2的介电封盖层来选择性地抑制InGaAs/GaAs量子阱激光结构的热互扩散。在同一晶圆上，在非封顶和封顶区域之间获得了~ 25nm的大差分波长位移，这有望实现由增益、相位和无源波导部分组成的多段半导体激光器的单片集成。

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Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

In this work, we report the use of dielectric capping layer of TiO2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ~ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.

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COMMAD 2012

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