自旋涂覆a-IZO薄膜晶体管的电学特性

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472434

L. Deam, K. K. Lee, J. McCallum, B. Singh

{"title":"自旋涂覆a-IZO薄膜晶体管的电学特性","authors":"L. Deam, K. K. Lee, J. McCallum, B. Singh","doi":"10.1109/COMMAD.2012.6472434","DOIUrl":null,"url":null,"abstract":"Electrical measurements have been performed on amorphous metal oxide spin-coated thin-film transistors. The conducting layer is amorphous indium zinc oxide (a-IZO) which has been processed at low temperatures. We are looking to improve material and device properties, in particular carrier mobility, using electrical characterisation techniques such as deep-level transient spectroscopy (DLTS) and Hall measurements.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical characterisation of spin-coated a-IZO thin-film transistors\",\"authors\":\"L. Deam, K. K. Lee, J. McCallum, B. Singh\",\"doi\":\"10.1109/COMMAD.2012.6472434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical measurements have been performed on amorphous metal oxide spin-coated thin-film transistors. The conducting layer is amorphous indium zinc oxide (a-IZO) which has been processed at low temperatures. We are looking to improve material and device properties, in particular carrier mobility, using electrical characterisation techniques such as deep-level transient spectroscopy (DLTS) and Hall measurements.\",\"PeriodicalId\":136573,\"journal\":{\"name\":\"COMMAD 2012\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COMMAD 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2012.6472434\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对非晶金属氧化物自旋涂覆薄膜晶体管进行了电学测量。导电层为低温处理的无定形氧化铟锌(a-IZO)。我们正在寻求改善材料和器件的性能，特别是载流子迁移率，使用电气表征技术，如深能级瞬态光谱(DLTS)和霍尔测量。

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Electrical characterisation of spin-coated a-IZO thin-film transistors

Electrical measurements have been performed on amorphous metal oxide spin-coated thin-film transistors. The conducting layer is amorphous indium zinc oxide (a-IZO) which has been processed at low temperatures. We are looking to improve material and device properties, in particular carrier mobility, using electrical characterisation techniques such as deep-level transient spectroscopy (DLTS) and Hall measurements.

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COMMAD 2012

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