Ion-implantation and analysis for doped silicon slot waveguides

Abstract

Ion implantation is being used to fabricate silicon-nanocrystal (Si-nc) erbium-doped slot waveguide structures. Photoluminescence (PL) measurements are used to investigate the luminescent and erbium sensitisation properties while Rutherford backscattering spectrometry (RBS) is used to provide structural information. This study is a preliminary step toward development of active elements for silicon optical interconnects.