R. Lyttleton, K. Muhieddine, J. Anthony, A. Micolich
{"title":"热退火是三乙基硅乙基反辐射噻吩(TESADT)有机晶体管结晶的可行替代方法吗?","authors":"R. Lyttleton, K. Muhieddine, J. Anthony, A. Micolich","doi":"10.1109/COMMAD.2012.6472426","DOIUrl":null,"url":null,"abstract":"Solvent annealing is a wellknown method for crystallization of the TESADT semiconductor film in organic transistors. We show that although thermal annealing is also effective in producing crystallization, it compromises the resulting electrical performance.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene (TESADT) organic transistors?\",\"authors\":\"R. Lyttleton, K. Muhieddine, J. Anthony, A. Micolich\",\"doi\":\"10.1109/COMMAD.2012.6472426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Solvent annealing is a wellknown method for crystallization of the TESADT semiconductor film in organic transistors. We show that although thermal annealing is also effective in producing crystallization, it compromises the resulting electrical performance.\",\"PeriodicalId\":136573,\"journal\":{\"name\":\"COMMAD 2012\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COMMAD 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2012.6472426\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472426","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene (TESADT) organic transistors?
Solvent annealing is a wellknown method for crystallization of the TESADT semiconductor film in organic transistors. We show that although thermal annealing is also effective in producing crystallization, it compromises the resulting electrical performance.