Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene (TESADT) organic transistors?

R. Lyttleton, K. Muhieddine, J. Anthony, A. Micolich
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Abstract

Solvent annealing is a wellknown method for crystallization of the TESADT semiconductor film in organic transistors. We show that although thermal annealing is also effective in producing crystallization, it compromises the resulting electrical performance.
热退火是三乙基硅乙基反辐射噻吩(TESADT)有机晶体管结晶的可行替代方法吗?
溶剂退火法是制备有机晶体管中TESADT半导体薄膜的常用方法。我们表明,虽然热退火在产生结晶方面也是有效的,但它会损害所得的电性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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