Symposium 1989 on VLSI Circuits最新文献

{"title":"A novel memory cell architecture for high-density DRAMs","authors":"Y. Ohta, T. Mimoto, Y. Torimaru, R. Miyake","doi":"10.1109/VLSIC.1989.1037509","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037509","url":null,"abstract":"when the CBlCS ratio ia grsatar than 1. AV1 in 121 i s larger than the mnventiond AV, in (11. The CBCS ratio is about LO in praelioe. For the mndition AV* AV, the new cell -raga fapaeitanes is snavgh to be abovt 314 that af the mnvintianal cell ( see Fig.2 1 . Thus the density of the FEC cell b-m~a~ullygrraterthenthatafthc2-alsmentcel l . thatisfactorof 1.6( m T a b l e 1 ).ThismaksstheFECcellsvlfableforhighd~ruityDRAM~.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124844125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A speed enhancement DRAM array architecture with embedded ECC","authors":"K. Arimoto, Y. Matsuda, K. Furutani, M. Tsukude, T. Oisiii, K. Mashiko, K. Fujishima","doi":"10.1109/VLSIC.1989.1037514","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037514","url":null,"abstract":"A new array architecture with countermeasures for the smaller signal charge caused by scaling down is proposed. On the basis of a new access model, the combination of a hierarchical data bus configuration and multipurpose register (MPR) provides high-speed array access. The MPR also includes a practical array-embedded ECC with little area penalty and no access overhead in the page mode. This array architecture is applied to a scaled-down 16-Mbit DRAM and has achieved high performance.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126638578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance analog-to-digital converters","authors":"B. Wooley","doi":"10.1109/VLSIC.1989.1037484","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037484","url":null,"abstract":"As a consequence of the continuing scaling of semiconductor integrated circuit technology, digital means of processing, storing, and transmitting signals are rapidly displacing analog alternatives across a broad range of applications. Compared with analog implementations, digital systems offer higher resolution, noise insensitivity. and enhanced flexibility. They are also earierto both design and test, and are more readily amenable to design automation. Programmable general purpose digital signal processors have been available for some years, and design tools that aid in the automated generation of efficient application specific processors are becoming available.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121234389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A circuit design for 2 Gbit/s Si brpolar crosspoint switch LSIs","authors":"M. Suzuki, N. Yamanaka, M. Hirata, S. Kikuchi","doi":"10.1109/VLSIC.1989.1037491","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037491","url":null,"abstract":"A Si bipolar circuit design technology for gigabit-per-second crosspoint switch LSI's is described. An 8X 8 and an expandable 16X 16 crosspoint switch LSI have been developed utilizing a new circuit design and super self-aligned process technology (SST-1A). The LSI's success- fully switched with a bit error rate of less than at 2.5 Gbit/s using a Z9 - 1 pseudorandom NRZ sequence. Pulse jitter has been limited to less than 80 ps at 1.2 Gbit/s by utilizing a small internal voltage swing (225 mV) employing a differential CML cell, including a selector. The LSI's have an ECL-compatible interface, -4- and - 2-V power supply voltages, and a power dissipation of less than 0.9 W for the 8 X 8 LSI and 2.8 W for the expandable 16~ 16 LSI.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114035070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mappable memory subsystem for high speed applications","authors":"A. Shubat, Y. Cedar, B. Sani, D. Nguyen, A. Singh, S. Ali","doi":"10.1109/VLSIC.1989.1037483","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037483","url":null,"abstract":"","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115392807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An experimental low temperature DRAM","authors":"W. Henkels, N. Lu, W. Hwang, T. Rajeevakumar, R. Franch, K. Jenkins, T. J. Bumlot, D. Heidel, M. Immediato","doi":"10.1109/VLSIC.1989.1037471","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037471","url":null,"abstract":"","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122641491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 4ns 16k BiCMOS SRAM","authors":"W. Haimsch, R. Krebs, K. Ziemann","doi":"10.1109/VLSIC.1989.1037492","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037492","url":null,"abstract":"A 2k x 8bit, ECL lOOK compatible BiCMOS SRAM with 4 ne 1 6 0 ' . -4.5V) address a c c e s s time is re6ort;d. The properly controlled bit . line voltageswing (60mV), a current sensing method and optimized ECL decoding circuits provide the reliable and fasf readout opeiation. The SRAM features an on chip write pulse generator. latches for input and output bits and a full six transistor CMOS cell array. Power dissipation is 1.9511 end chio size is 3.9x5.9mm2. The SRAM is curkently processed in 1.2um BiCMOS, using double metal, triple polysilicon end self aligned bipolar transistors. this contribution to saturation can be everted. The address access time is mainly determined by the wordline and bitline capacitence which deDends on the cell array-configuration. With respect to the driving capability of the Totem Pole buffer controlline wordline the best arrangement was fouGd to be 64 rows and 2 5 6 columns. B e a h l w r i t P a n d s m s p r i r . is shown in fig. 2 . The bitline ( Z B L l R ) potential is mainly fixed by two emitter followers (11T! 1ZT). Additionally a 30um PMOS transistor (12P) clamps the voltage swing to 60 mV. This small valtage swing is amplified by B bipolar sense ampiifier which consists oftwo stages. The first stage (15T, 14T). a bioolar differential pair, detects the voitage drop caused by the cell current at the resistors RSENSLl and RSENSR1. The voltage drop of the buried layer which connects the double collector contacts (11T, 12T) adds to the voltage drao at each sense resistor. 32 of these dif?erential pairs have common collectors and a common current source (16T). TO reduce voltage swing of the common collector nodes they are connected to the second stage. a.cascode configuration. which controlls the output buffer with latch. Column select is done a ECL signal of 200 mV voltage swing 1; the base of transistor 13T which works a s an emitter follower. If select signal is high, the current of the =ommon sense amplifier current source (16T) flows through the corresponding differential pair. For WRITE operation. clamp transistor (12P) and bipolar pullup transistors (11T. 12T) are switched off. while two NMOS transistors (12N. 13N); which connect bitline to the write bus. are switched on. The write bus 1BLLW. BLRW) itself is controlled by two.large NMOS transistors. An ECL WRITE pulse can be generated by an on chip C ~ n e r a t ~ r 1 W P G l . An external WRITE pulse signal can alternatively be used. An ECL multiplexer selects one of the both WRITE pulses. The WRITE bus consists of 16 signal lines end is controlled by 16 pull down NMOS transistors (200um). These are driven by 2x8 complementary CMOS signals which a r e generated from 8 DATA-IN signela. A system of 14 bias drivers supplies the 16k BiCMOS SRAM with the necessary reference voltaees. The SRAM features three operatio: modes: asynchronous without WPG or clock driven. with or without WPG. The clock input signal is internally converted to differential logic. Low ou","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130007232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A review of superconducting three-terminal devices","authors":"U. Kawabe","doi":"10.1109/VLSIC.1989.1037468","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037468","url":null,"abstract":"Superconducting three-terminal devices have been extensively given attention as one of future digital devices since Bcdnorz and Mueller discovered high-critical-temperature superconductivity in the La-Ba-Cu-0 system. The use of zero-resistance superconductivity and low noise cryogenics is expectcd for a limiting field of silicone semiconductor devices. In this paper, it is worthwhile to review some superconducting threeterminal devices expected for fulure devices though almost the materials used are low-temperature superconductors. The feature of various devices hitheno reported is discussed. The possibility and problem of high-temperature superconducting devices are also discussed.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121309511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CMOS subnanosecond true-ECL output buffer","authors":"E. Seevinck, J. Dikken, H. Schumacher","doi":"10.1109/VLSIC.1989.1037465","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037465","url":null,"abstract":"Abstruct -An emitter coupled logic (ECL) lOOK compatible output buffer circuit fabricated in a submicrometer CMOS-only process is presented. High speed (0.9-11s delay) and sufficient precision are achieved through the use of a new circuit principle. Negative feedback and an error correction technique are applied in such a way that external components and/or additional power supplies are not required. Aspects of stability and accuracy are investigated and simulation results are discussed to explain the new circuit technique. The actual design and practical aspects of it, such as layout, implementation in silicon, as well as technology features, are shown. Measured results and simulation results, showing the good performance of the ECL output buffer across a wide range of capacitive loading, are presented.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131064920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of an outline font rasterizing LSI","authors":"I. Nagashirna, N. Kai, T. Minagawa, M. Ohhashi","doi":"10.1109/VLSIC.1989.1037517","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037517","url":null,"abstract":"lchiro Nagashima. Naoyuki Kai, Tsutomu Minagawa and Masahide Ohhashi Semiconductor Device Engineering Labratory Toshiba Corporation 580-1, Horikawa-cho, Saiwai-ku, Kawasaki, 210, Japan Phone (044)548-2511","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132566580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}